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FDD10AN06A0 fiches techniques PDF

Fairchild Semiconductor - N-Channel PowerTrench MOSFET 60V/ 50A/ 10.5m

Numéro de référence FDD10AN06A0
Description N-Channel PowerTrench MOSFET 60V/ 50A/ 10.5m
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FDD10AN06A0 fiche technique
August 2002
FDD10AN06A0
N-Channel PowerTrench® MOSFET
60V, 50A, 10.5m
Features
• rDS(ON) = 9.4m(Typ.), VGS = 10V, ID = 50A
• Qg(tot) = 28nC (Typ.), VGS = 10V
• Low Miller Charge
• Low Qrr Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101
Formerly developmental type 82560
Applications
• Motor / Body Load Control
• ABS Systems
• Powertrain Management
• Injection Systems
• DC-DC converters and Off-line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 12V and 24V systems
DRAIN
(FLANGE)
D
GATE
SOURCE
G
TO-252AA
FDD SERIES
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC < 115oC, VGS = 10V)
Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 52oC/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25oC
Operating and Storage Temperature
S
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252
Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area
Ratings
60
±20
50
11
Figure 4
429
135
0.9
-55 to 175
1.11
100
52
Units
V
V
A
A
A
mJ
W
W/oC
oC
oC/W
oC/W
oC/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
©2002 Fairchild Semiconductor Corporation
FDD10AN06A0 Rev. A

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