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Número de pieza | FDC655AN | |
Descripción | Single N-Channel/ Logic Level/ PowerTrenchTM MOSFET | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FDC655AN (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! June 1998
FDC655AN
Single N-Channel, Logic Level, PowerTrenchTM MOSFET
General Description
This N-Channel Logic Level MOSFET is produced using
Fairchild Semiconductor's advanced PowerTrench process
that has been especially tailored to minimize on-state
resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and fast
switching are required.
Features
6.3 A, 30 V. RDS(ON) = 0.027 Ω @ VGS = 10 V
RDS(ON) = 0.035 Ω @ VGS = 4.5 V.
Fast switching.
Low gate charge ( typical 9 nC).
SuperSOTTM-6 package: small footprint (72% smaller than
SO-8); low profile (1mm thick); pin compatible with
TSOP-6.
SOT-23
SuperSOTTM-6
SuperSOTTM-8
SO-8
SOT-223
SOIC-16
S
D
D .55A
G
D
SuperSOT TM -6 pin 1 D
Absolute Maximum Ratings TA = 25°C unless otherwise note
Symbol Parameter
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage - Continuous
ID Drain Current - Continuous
- Pulsed
PD Maximum Power Dissipation
(Note 1a)
(Note 1a)
(Note 1b)
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
© 1998 Fairchild Semiconductor Corporation
16
25
34
FDC655AN
30
±20
6.3
20
1.6
0.8
-55 to 150
78
30
Units
V
V
A
W
°C
°C/W
°C/W
FDC655AN Rev.C
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet FDC655AN.PDF ] |
Número de pieza | Descripción | Fabricantes |
FDC655AN | Single N-Channel/ Logic Level/ PowerTrenchTM MOSFET | Fairchild Semiconductor |
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