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PDF FDC6420C Data sheet ( Hoja de datos )
| Número de pieza | FDC6420C | |
| Descripción | 20V N & P-Channel PowerTrench MOSFETs | |
| Fabricantes | Fairchild Semiconductor | |
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September 2001
FDC6420C
20V N & P-Channel PowerTrench® MOSFETs
General Description
These N & P-Channel MOSFETs are produced using
Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state resistance and yet maintain superior
switching performance.
These devices have been designed to offer
exceptional power dissipation in a very small footprint
for applications where the bigger more expensive
SO-8 and TSSOP-8 packages are impractical.
Applications
• DC/DC converter
• Load switch
• LCD display inverter
D2
S1
D1
Features
• Q1 3.0 A, 20V. RDS(ON) = 70 mΩ @ VGS = 4.5 V
RDS(ON) = 95 mΩ @ VGS = 2.5 V
• Q2 –2.2 A, 20V. RDS(ON) = 125 mΩ @ VGS = –4.5 V
RDS(ON) = 190 mΩ @ VGS = –2.5 V
• Low gate charge
• High performance trench technology for extremely
low RDS(ON).
• SuperSOT –6 package: small footprint (72% smaller than
SO-8); low profile (1mm thick).
Q2(P)
43
SuperSOT TM-6
Pin 1
G2
S2
G1
SuperSOT™-6
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.420
FDC6420C
7’’
52
61
Q1(N)
Q1 Q2
20 –20
±12 ±12
3.0 –2.2
12 –6
0.96
0.9
0.7
–55 to +150
130
60
Units
V
V
A
W
°C
°C/W
°C/W
Tape width
8mm
Quantity
3000 units
©2001 Fairchild Semiconductor Corporation
FDC6420C Rev C(W)
1 page  
Typical Characteristics
5
ID = 3A
4
3
VDS = 5V
10V
15V
2
1
0
01234
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
1
VGS = 4.5V
0.1 SINGLE PULSE
RθJA = 180oC/W
TA = 25oC
1ms
10ms
100ms
1s
10s
DC
0.01
0.1
1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
450
360
CISS
270
f = 1 MHz
VGS = 0 V
180
COSS
90
CRSS
0
0
5 10 15
VDS, DRAIN TO SOURCE VOLTAGE (V)
20
Figure 8. Capacitance Characteristics.
5
4
3
2
1
0
0.1
SINGLE PULSE
RθJA = 180°C/W
TA = 25°C
1 10 100
t1, TIME (sec)
1000
Figure 10. Single Pulse Maximum
Power Dissipation.
FDC6420C Rev C(W)
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FDC6420C.PDF ] | |
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