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Fairchild Semiconductor - P-Channel 2.5V Specified PowerTrenchMOSFET

Numéro de référence FDC642
Description P-Channel 2.5V Specified PowerTrenchMOSFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FDC642 fiche technique
July 1999
FDC642P
P-Channel 2.5V Specified PowerTrenchTM MOSFET
General Description
This P-Channel 2.5V specified MOSFET is produced
using Fairchild's advanced PowerTrench process that
has been especially tailored to minimize on-state
resistance and yet maintain low gate charge for
superior switching performance.
These devices have been designed to offer exceptional
power dissipation in a very small footprint for
applications where the larger packages are impractical.
Applications
• Load switch
• Battery protection
• Power management
Features
• -4 A, -20 V. RDS(ON) = 0.065 @ VGS = -4.5 V
RDS(ON) = 0.100 @ VGS = -2.5 V
• Fast switching speed.
• Low gate charge (7.2nC typical).
• High performance trench technology for extremely
low RDS(ON).
• SuperSOTTM-6 package: small footprint (72% smaller
than standard SO-8); low profile (1mm thick).
S
D
D
SuperSOT TM-6
G
D
D
16
25
34
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
Drain Current - Pulsed
Power Dissipation for Single Operation
(Note 1)
(Note 1a)
(Note 1a)
(Note 1b)
TJ, Tstg
Operating and Storage Junction Temperature Range
Ratings
-20
±8
-4
-20
1.6
0.8
-55 to +150
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Outlines and Ordering Information
Device Marking
Device
Reel Size
.642
FDC642P
7’’
78
30
Tape Width
8mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
1999 Fairchild Semiconductor Corporation
FDC642P, Rev. B

PagesPages 8
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