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Numéro de référence | FDC6332L | ||
Description | Common Source Load Switch P-Channel 1.8V Specified PowerTrench MOSFET | ||
Fabricant | Fairchild Semiconductor | ||
Logo | |||
1 Page
June 2003
FDC6332L
Common Source Load Switch
P-Channel 1.8V Specified PowerTrench MOSFET
General Description
This Load Switch integrates an N-Channel Power
MOSFET that drives Common-Source P-Channels and
in a small SuperSotTM–6 package. It uses Fairchild’s
advanced low voltage PowerTrench process. The
RDS(ON) is 750 mΩ per the switch @ VGS 1.8Vand is
optimized for battery power management applications.
Applications
• Battery management/Charger Application
• Accessory load switching
Features
• –1 A, 8 V. RDS(ON) = 350 mΩ @ VGS = –4.5 V
RDS(ON) = 500 mΩ @ VGS = –2.5 V
RDS(ON) = 750 mΩ @ VGS = –1.8 V
• N-Channel MOSFET includes Zener protection for
ESD ruggedness (>6KV Human body model)
• High performance trench technology for extremely
low RDS(ON)
D2
S1
D1
SuperSOT TM-6
Pin 1
G2
S2
G1
SuperSOT™-6
Vin 1
On/Off 2
G1/G2 3
6 S1/S2
5 Vout
4 GND
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VIN Input Voltage
VON Turn-On Voltage
ILoad Load Current – Continuous
– Pulsed
(Note 1)
PD
TJ, TSTG
Maximum Power Dissipation
(Note 1)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1)
(Note 1)
Package Marking and Ordering Information
Device
Reel Size
.332 FDC6332L
7’’
VDROP
IN OUT
ON/OFF
Equivalent Circuit
Ratings
±8
8
–1.0
–2.0
0.7
–55 to +150
160
90
Tape width
8mm
Units
V
V
A
W
°C
°C/W
Quantity
3000 units
2003Fairchild Semiconductor Corporation
FDC6332L Rev D(W)
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Pages | Pages 4 | ||
Télécharger | [ FDC6332L ] |
No | Description détaillée | Fabricant |
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