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PDF FDC6036P Data sheet ( Hoja de datos )
| Número de pieza | FDC6036P | |
| Descripción | P-Channel 1.8V Specified PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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January 2004
FDC6036P
P-Channel 1.8V Specified PowerTrench MOSFET
General Description
This dual P-Channel 1.8V specified MOSFET uses
Fairchild’s advanced low voltage PowerTrench process.
Packaged in FLMP SSOT-6, the RDS(ON) and thermal
properties of the device are optimized for battery power
management applications.
Applications
• Battery management/Charger Application
• Load switch
Features
• –5 A, –20 V.
RDS(ON) = 44 mΩ @ VGS = –4.5 V
RDS(ON) = 64 mΩ @ VGS = –2.5 V
RDS(ON) = 95 mΩ @ VGS = –1.8 V
• Low gate charge, High Power and Current handling
capability
• High performance trench technology for extremely
low RDS(ON)
• FLMP SSOT-6 package: Enhanced thermal
performance in industry-standard package size
Bottom Drain Contact
43
52
61
Bottom Drain Contact
MOSFET Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
ID Drain Current – Continuous
(Note 1a)
– Pulsed
PD Power Dissipation for Dual Operation
TJ, Tstg
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a)
RθJC Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
.036
FDC6036P
7’’
2004 Fairchild Semiconductor Corporation
Ratings
–20
±8
–5
–20
1.8
1.8
0.9
–55 to +150
68
1
8mm
Units
V
V
A
W
°C
°C/W
3000 units
FDC6036P Rev C2 (W)
1 page  
Typical Characteristics
20
VGS =-4.5V
15
-2.5V
-2.0V
10
-1.8V
5
-1.5V
0
012345
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.4
ID = -5A
1.3 VGS = -4.5V
1.2
1.1
1
0.9
0.8
-50
-25
0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
15
VDS = -5V
12
9
TA = -55oC
25oC
125oC
6
3
0
0.5
1 1.5 2
-VGS, GATE TO SOURCE VOLTAGE (V)
2.5
Figure 5. Transfer Characteristics.
2.6
2.4
2.2
VGS =-1.8V
2
1.8
1.6 -2.0V
1.4 -2.5V
1.2
1
0.8
0
5 10 15
-ID, DRAIN CURRENT (A)
-4.5V
20
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.15
ID = -2.5A
0.13
0.11
0.09
0.07
0.05
TA = 25oC
TA = 125oC
0.03
1
234
-VGS, GATE TO SOURCE VOLTAGE (V)
5
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
VGS = 0V
1
0.1
0.01
TA = 125oC
25oC
0.001
-55oC
0.0001
0
0.2 0.4 0.6 0.8
1
-VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDC6036P Rev C2 (W)
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet FDC6036P.PDF ] | |
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