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FDC602P fiches techniques PDF

Fairchild Semiconductor - P-Channel 2.5V Specified PowerTrench MOSFET

Numéro de référence FDC602P
Description P-Channel 2.5V Specified PowerTrench MOSFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FDC602P fiche technique
November 1999
ADVANCE INFORMATION
FDC602P
P-Channel 2.5V Specified PowerTrenchMOSFET
General Description
This P-Channel 2.5V specified MOSFET uses a rugged
gate version of Fairchild’s advanced PowerTrench
process. It has been optimized for power management
applications with a wide range of gate drive voltage
(2.5V – 12V).
Applications
= Battery management
= Load switch
= Battery protection
Features
= –5.5 A, –12 V
RDS(ON) = 0.033 @ VGS = –4.5 V
RDS(ON) = 0.052 @ VGS = –2.5 V
= Fast switching speed.
= High performance trench technology for extremely
low RDS(ON) .
S
D
D
SuperSOT TM-6
G
D
D
16
25
34
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD Maximum Power Dissipation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.602
FDC602P
7’’
Ratings
–12
±12
-5.5
-30
1.6
0.8
-55 to +150
78
30
Tape width
8mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
1999 Fairchild Semiconductor Corporation
FDC602P Rev A

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