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PDF FDC6020C Data sheet ( Hoja de datos )
| Número de pieza | FDC6020C | |
| Descripción | Complementary PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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November 2003
FDC6020C
Complementary PowerTrench MOSFET
General Description
These N & P-Channel MOSFETs are produced using
Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state resistance and yet maintain superior
switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Applications
• DC/DC converter
• Load switch
• Motor Driving
Features
• Q1 –4.2 A, –20V. RDS(ON) = 55 mΩ @ VGS = – 4.5 V
RDS(ON) = 82 mΩ @ VGS = – 2.5 V
• Q2 5.9 A, 20V. RDS(ON) = 27 mΩ @ VGS = 4.5 V
RDS(ON) = 39 mΩ @ VGS = 2.5 V
• Low gate charge
• High performance trench technology for extremely
low RDS(ON).
• FLMP SSOT-6 package: Enhanced thermal
performance in industry-standard package size
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Dual Operation
Power Dissipation for single Operation
(Note 1a)
(Note 1a)
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.020 FDC6020C
7’’
2003 Fairchild Semiconductor Corporation
Bottom Drain Contact
Q2 (N)
4
3
52
61
Q1 (P)
Bottom Drain Contact
Q1 Q2
–20 20
±12 ±12
–4.2 5.9
–20
1.6
20
1.8
1.2
–55 to +150
Units
V
V
A
W
°C
68 °C/W
1
Tape width
8mm
Quantity
3000 units
FDC6020C Rev B(W)
1 page  
Typical Characteristics : Q1
5
ID = -4.2A
4
3
VDS = -5V
-15V
-10V
2
1
0
0123456789
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
10
1
0.1
0.01
0.1
RDS(ON) LIMIT
VGS = -4.5V
SINGLE PULSE
RθJA = 102oC/W
TA = 25oC
10µs
100µs
1ms
10ms
100ms
1s
DC
1 10
-VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
1100
1000
900
800
700
600
500
400
300
COSS
200
100
0
0
CRSS
4
CISS
8
f = 1 MHz
VGS = 0 V
12 16 20
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
10
SINGLE PULSE
8
RθJA = 102°C/W
TA = 25°C
6
4
2
0
0.01
0.1
1 10
t1, TIME (sec)
100
Figure 10. Single Pulse Maximum
Power Dissipation.
1000
FDC6020C RevB (W)
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FDC6020C.PDF ] | |
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