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Fairchild Semiconductor - 100V N-Channel PowerTrench MOSFET

Numéro de référence FDC3616N
Description 100V N-Channel PowerTrench MOSFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FDC3616N fiche technique
January 2004
FDC3616N
100V N-Channel PowerTrenchMOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS(ON) and fast switching speed.
Applications
DC/DC converter
Load Switching
Features
3.7 A, 100 V.
RDS(ON) = 70 m@ VGS = 10 V
RDS(ON) = 80 m@ VGS = 6.0 V
High performance trench technology for extremely
low RDS(ON)
Low gate charge (23nC typical)
High power and current handling capability
Fast switching speed.
G
S
S
SuperSOT-6TM FLMP
S
S
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Maximum Power Dissipation
(Note 1a)
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.616
FDC3616N
7’’
Bottom Drain
1
2
3
Ratings
100
± 20
3.7
20
2
1.1
55 to +150
60
111
0.5
Tape width
8mm
6
5
4
Units
V
V
A
W
°C
°C/W
Quantity
3000 units
2004 Fairchild Semiconductor Corporation
FDC3616N Rev C1 (W)

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