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PDF FDB6035AL Data sheet ( Hoja de datos )
| Número de pieza | FDB6035AL | |
| Descripción | N-Channel Logic Level PowerTrenchTM MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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July 1998
FDP6035AL/FDB6035AL
N-Channel Logic Level PowerTrenchTM MOSFET
General Description
This N-Channel Logic Level MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower gate
charge than other MOSFETs with comparable RDS(on)
specifications.
The result is a MOSFET that is easy and safer to drive (even
at very high frequencies), and DC/DC power supply designs
with higher overall efficiency.
Features
48A, 30 V. RDSR(ODNS)(O=N)0=.001.20517ΩΩ@@VVGGSS==140.5VV, .
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
High performance trench technology for extremely low
RDS(ON).
175°C maximum junction temperature rating.
_________________________________________________________________________________
D
G
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol Parameter
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
ID Drain Current - Continuous
- Pulsed
(Note 1)
(Note 1)
PD Total Power Dissipation @ TC = 25°C
Derate above 25°C
TJ,TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8"
from case for 5 seconds
THERMAL CHARACTERISTICS
RθJC Thermal Resistance, Junction-to-Case
RθJA Thermal Resistance, Junction-to-Ambient
FDP6035AL
30
±20
48
150
58
0.4
-65 to 175
275
FDB6035AL
2.6
62.5
Units
V
V
A
W
W/°C
°C
°C
°C/W
°C/W
© 1998 Fairchild Semiconductor Corporation
FDP6035AL Rev.C
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet FDB6035AL.PDF ] | |
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