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Fairchild Semiconductor - N-Channel Logic Level PowerTrench MOSFET

Numéro de référence FDB6030
Description N-Channel Logic Level PowerTrench MOSFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FDB6030 fiche technique
July 2000
FDP6030BL/FDB6030BL
N-Channel Logic Level PowerTrenchMOSFET
General Description
This N-Channel Logic Level MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower gate
charge than other MOSFETs with comparable RDS(on)
specifications resulting in DC/DC power supply designs
with higher overall efficiency.
Features
• 40 A, 30 V. RDS(ON) = 0.018 @ VGS = 10 V
RDS(ON) = 0.024 @ VGS = 4.5 V.
• Critical DC electrical parameters specified at elevated
temperature.
• Rugged internal source-drain diode can eliminate the
need for an external Zener diode transient suppressor.
• High performance trench technology for
extremely low RDS(ON).
• 175°C maximum junction temperature rating.
D
D
G
D
S
TO-220
FDP Series
G
S
TO-263AB
FDB Series
G
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
FDP6030BL FDB6030BL
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
ID
Maximum Drain Current - Continuous
(Note 1)
- Pulsed
PD Total Power Dissipation @ TC = 25°C
Derate above 25°C
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC Thermal Resistance, Junction-to-Case
RθJA Thermal Resistance, Junction-to-Ambient
30
±20
40
120
60
0.36
-65 to +175
2.5
62.5
Units
V
V
A
W
W/°C
°C
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDB6030BL
FDB6030BL
13’’
FDP6030BL
FDP6030BL
Tube
Tape Width
24mm
N/A
Quantity
800
45
200 Fairchild Semiconductor International
FDP6030BL/FDB6030BL Rev.C

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