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Fairchild Semiconductor - N-Channel PowerTrench MOSFET 100V/ 80A/ 9m

Numéro de référence FDB3632
Description N-Channel PowerTrench MOSFET 100V/ 80A/ 9m
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FDB3632 fiche technique
April 2003
FDB3632 / FDP3632 / FDI3632
N-Channel PowerTrench® MOSFET
100V, 80A, 9m
Features
• rDS(ON) = 7.5m(Typ.), VGS = 10V, ID = 80A
• Qg(tot) = 84nC (Typ.), VGS = 10V
• Low Miller Charge
• Low QRR Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101
Formerly developmental type 82784
Applications
• DC/DC converters and Off-Line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V Systems
• High Voltage Synchronous Rectifier
• Direct Injection / Diesel Injection Systems
• 42V Automotive Load Control
• Electronic Valve Train Systems
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
TO-220AB
FDP SERIES
GATE
DRAIN
(FLANGE)
SOURCE
TO-263AB
FDB SERIES
DRAIN
(FLANGE)
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC < 111oC, VGS = 10V)
Continuous (Tamb = 25oC, VGS = 10V, RθJA = 43oC/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25oC
Operating and Storage Temperature
SOURCE
DRAIN
GATE
G
TO-262AB
FDI SERIES
Ratings
100
±20
80
12
Figure 4
393
310
2.07
-55 to 175
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance Junction to Case TO-220, TO-263, TO-262
Thermal Resistance Junction to Ambient TO-220, TO-262 (Note 2)
Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area
0.48
62
43
D
S
Units
V
V
A
A
A
mJ
W
W/oC
oC
oC/W
oC/W
oC/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
©2003 Fairchild Semiconductor Corporation
FDB3632 / FDP3632 / FDI3632 Rev. B1

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