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Numéro de référence | FD2000DU-120 | ||
Description | HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE | ||
Fabricant | Mitsubishi Electric Semiconductor | ||
Logo | |||
FD2000DU-120
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES
FD2000DU-120
HIGH POWER, HIGH FREQUENCY,
PRESS PACK TYPE
OUTLINE DRAWING
Dimension in mm
CATHODE
φ 190 max
φ 130 ± 0.2
φ 3.6 ± 0.2 DEPTH
2.2 ± 0.2
q IF(AV) Average forward current .....................1700A
q VRRM Repetitive peak reverse voltage ..........6000V
q QRR Reverse recovery charge ................. 1500µC
q Press pack type
TYPE
NAME
ANODE
φ 130 ± 0.2
φ 190 max
φ 3.6 ± 0.2 DEPTH
2.2 ± 0.2
APPLICATION
High-power inverters, Fly-wheel diodes in DC choppers, Power supplies as high frequency
rectifiers
MAXIMUM RATINGS
Symbol
Parameter
VRRM
VRSM
VR(DC)
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Voltage class
120
6000
6000
4800
Symbol
IF(RMS)
IF(AV)
IFSM
I2t
Tj
Tstg
—
—
Parameter
RMS forward current
Average forward current
Surge forward current
Current-squared, time integration
Junction temperature
Storage temperature
Mounting force required
Weight
Conditions
f = 60Hz, sine wave θ = 180°, Tf = 65°C
One half cycle at 60Hz, non-repetitive
One cycle at 60Hz
Recommended value 108
Standard value
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test conditions
IRRM
VFM
QRR
Rth(j-f)
Repetitive peak reverse current
Forward voltage
Reverse recovery charge
Thermal resistance
Tj = 125°C, VRRM Applied
Tj = 125°C, IFM = 6300A, Instantaneous measurememt
IFM = 2000A, diF/dt = –30A/µs, VR = 150V,
Tj = 125°C
Junction to fin
Ratings
2670
1700
40
6.7 × 106
–40 ~ +125
–40 ~ +150
98 ~ 118
4600
Unit
V
V
V
Unit
A
A
kA
A2s
°C
°C
kN
g
Limits
Unit
Min Typ Max
— — 300 mA
——
5.0 V
— — 1500 µC
— — 0.009 °C/W
Aug.1998
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Pages | Pages 3 | ||
Télécharger | [ FD2000DU-120 ] |
No | Description détaillée | Fabricant |
FD2000DU-120 | HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE | Mitsubishi Electric Semiconductor |
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