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FD2000DU-120 fiches techniques PDF

Mitsubishi Electric Semiconductor - HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE

Numéro de référence FD2000DU-120
Description HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE
Fabricant Mitsubishi Electric Semiconductor 
Logo Mitsubishi Electric Semiconductor 





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FD2000DU-120 fiche technique
FD2000DU-120
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES
FD2000DU-120
HIGH POWER, HIGH FREQUENCY,
PRESS PACK TYPE
OUTLINE DRAWING
Dimension in mm
CATHODE
φ 190 max
φ 130 ± 0.2
φ 3.6 ± 0.2 DEPTH
2.2 ± 0.2
q IF(AV) Average forward current .....................1700A
q VRRM Repetitive peak reverse voltage ..........6000V
q QRR Reverse recovery charge ................. 1500µC
q Press pack type
TYPE
NAME
ANODE
φ 130 ± 0.2
φ 190 max
φ 3.6 ± 0.2 DEPTH
2.2 ± 0.2
APPLICATION
High-power inverters, Fly-wheel diodes in DC choppers, Power supplies as high frequency
rectifiers
MAXIMUM RATINGS
Symbol
Parameter
VRRM
VRSM
VR(DC)
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Voltage class
120
6000
6000
4800
Symbol
IF(RMS)
IF(AV)
IFSM
I2t
Tj
Tstg
Parameter
RMS forward current
Average forward current
Surge forward current
Current-squared, time integration
Junction temperature
Storage temperature
Mounting force required
Weight
Conditions
f = 60Hz, sine wave θ = 180°, Tf = 65°C
One half cycle at 60Hz, non-repetitive
One cycle at 60Hz
Recommended value 108
Standard value
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test conditions
IRRM
VFM
QRR
Rth(j-f)
Repetitive peak reverse current
Forward voltage
Reverse recovery charge
Thermal resistance
Tj = 125°C, VRRM Applied
Tj = 125°C, IFM = 6300A, Instantaneous measurememt
IFM = 2000A, diF/dt = –30A/µs, VR = 150V,
Tj = 125°C
Junction to fin
Ratings
2670
1700
40
6.7 × 106
–40 ~ +125
–40 ~ +150
98 ~ 118
4600
Unit
V
V
V
Unit
A
A
kA
A2s
°C
°C
kN
g
Limits
Unit
Min Typ Max
— — 300 mA
——
5.0 V
— — 1500 µC
— — 0.009 °C/W
Aug.1998

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