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FD1500AV-90 fiches techniques PDF

Mitsubishi Electric Semiconductor - HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE

Numéro de référence FD1500AV-90
Description HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE
Fabricant Mitsubishi Electric Semiconductor 
Logo Mitsubishi Electric Semiconductor 





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FD1500AV-90 fiche technique
FD1500AV-90
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES
FD1500AV-90
HIGH POWER, HIGH FREQUENCY,
PRESS PACK TYPE
OUTLINE DRAWING
Dimensions in mm
9
¶40
φ 3.5 DEPTH 2.2 ± 0.2
CATHODE
φ 70
q IF(AV) Average forward current ......................1500A
q VRRM Repetitive peak reverse voltage ....... 3500 ~ 4500V
q QRR Reverse recovery charge ................. 2000µC
q Press pack type
TYPE
NAME
ANODE
φ 70
φ 120 MAX
φ 3.5 DEPTH 2.2 ± 0.2
APPLICATION
High-power inverters, Fly-wheel diodes in DC choppers, Power supplies as high frequency
rectifiers
MAXIMUM RATINGS
Symbol
Parameter
VRRM
VRSM
VR(DC)
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
70
3500
3500
2800
Voltage class
80
4000
4000
3200
Symbol
IF(RMS)
IF(AV)
IFSM
I2t
Tj
Tstg
Parameter
RMS forward current
Average forward current
Surge forward current
Current-squared, time integration
Junction temperature
Storage temperature
Mounting force required
Weight
Conditions
f = 60Hz, sine wave θ = 180°, Tf = 65°C
One half cycle at 60Hz, non-repetitive
One cycle at 60Hz
Recommended value 49
Standard value
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test conditions
IRRM
VFM
QRR
Rth(j-f)
Repetitive peak reverse current
Forward voltage
Reverse recovery charge
Thermal resistance
Tj = 125°C, VRRM Applied
Tj = 125°C, IFM = 3400A, Instantaneous measurement
IFM = 1200A, diF/dt = –30A/µs, VR = 150V,
Tj = 125°C
Junction to fin
90
4500
4500
3600
Ratings
2350
1500
24
2.4 × 106
–40 ~ +125
–40 ~ +150
44.1 ~ 58.8
1270
Unit
V
V
V
Unit
A
A
kA
A2s
°C
°C
kN
g
Limits
Unit
Min Typ Max
— — 150 mA
——
3.0 V
— — 2000 µC
— — 0.013 °C/W
Aug.1998

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