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Numéro de référence | FCX619 | ||
Description | NPN SILICON POWER (SWITCHING) TRANSISTOR | ||
Fabricant | Zetex Semiconductors | ||
Logo | |||
1 Page
SOT89 NPN SILICON POWER
(SWITCHING) TRANSISTOR
ISSUE 5 - SEPTEMBER 1999
FEATURES
* 2W POWER DISSIPATION
* 6A PEAK PULSE CURRENT
* EXCELLENT hFE CHARACTERISTICS UP TO 6 Amps
* EXTREMELY LOW SATURATION VOLTAGE e.g. 13mV typ.
* EXTREMELY LOW EQUIVALENT ON-RESISTANCE;
* RCE(sat) 87m at 2.75A
COMPLIMENTARY TYPE -
PARTMARKING DETAIL -
FCX720
619
FCX619
C
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at Tamb=25°C
VCBO
VCEO
VEBO
ICM
IC
IB
Ptot
50 V
50 V
5V
6A
2.75 A
500 mA
1† W
2‡
Operating and Storage Temperature Range Tj:Tstg
-55 to +150
°C
† recommended Ptot calculated using FR4 measuring 15x15x0.6mm
‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4
substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by
other suppliers.
**Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%
Spice parameter data is available upon request for these devices
Refer to the handling instructions for soldering surface mount components.
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Pages | Pages 3 | ||
Télécharger | [ FCX619 ] |
No | Description détaillée | Fabricant |
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TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
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