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PDF FCX591A Data sheet ( Hoja de datos )
| Número de pieza | FCX591A | |
| Descripción | PNP SILICON PLANAR MEDIUM POWER TRANSISTOR | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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SOT89 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 - OCTOBER 1995
PART MARKING DETAIL - P2
COMPLEMENTARY TYPE - FCX491A
FCX591A
C
ABSOLUTE MAXIMUM RATINGS.
E
C
B
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-40
Collector-Emitter Voltage
VCEO
-40
Emitter-Base Voltage
VEBO
-5
Peak Pulse Current
ICM -2
Continuous Collector Current
IC
-1
Base Current
IB -200
Power Dissipation at Tamb=25°C
Ptot
1
Operating and Storage Temperature Range Tj:Tstg
-65 to +150
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
V
V
V
A
A
mA
W
°C
Breakdown Voltages
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-on Voltage
Static Forward Current Transfer
Ratio
Transition Frequency
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
ICES
VCE(sat)
-40
-40
-5
VBE(sat)
VBE(on)
hFE
fT
300
300
250
160
30
150
-100
-100
-100
-0.2
-0.35
-0.5
-1.1
-1.0
800
V
V
V
nA
nA
nA
V
V
V
V
V
MHz
IC=-100µA
IC=-10mA*
IE=-100µA
VCB=-30V
VEB=-4V
VCES=-30V
IC=-100mA,IB=-1mA*
IC=-500mA IB=-20mA*
IC=-1A, IB=-100mA*
IC=-1A, IB=-50mA*
IC=-1A, VCE=-5V*
IC=-1mA,
IC=-100mA*,
IC=-500mA*, VCE=-5V
IC=-1A*,
IC=-2A*,
IC=-50mA, VCE=-10V
f=100MHz
Output Capacitance
Cobo
10 pF VCB=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for this device
For typical characteristics graphs see FMMT591A datasheet
3 - 93
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet FCX591A.PDF ] | |
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