FCPF7N60 Datasheet PDF - Fairchild Semiconductor
| Part Number | FCPF7N60 | |
| Description | 600V N-Channel MOSFET | |
| Manufacturers | Fairchild Semiconductor | |
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FCP7N60 / FCPF7N60
600V N-Channel MOSFET
Features
• 650V @TJ = 150°C
• Typ. RDS(on) = 0.53Ω
• Ultra low gate charge (typ. Qg = 25nC)
• Low effective output capacitance (typ. Coss.eff = 60pF)
• 100% avalanche tested
SuperFETTM
Description
SuperFETTM is, Farichild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been tailored to minimize con-
duction loss, provide superior switching performance, and with-
stand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system min-
iaturization and higher efficiency.
GDS
TO-220
GD S
TO-220F
D
!
"
!"
G!
"
"
!
S
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
IDM
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
VGSS
EAS
IAR
EAR
dv/dt
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 1)
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
FCP7N60 FCPF7N60
600
7 7*
4.4 4.4*
21 21*
± 30
230
7
8.3
4.5
83 31
0.67 0.25
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
FCP7N60
1.5
62.5
FCPF7N60
4.0
62.5
Unit
°C/W
°C/W
©2005 Fairchild Semiconductor Corporation
FCP7N60 / FCPF7N60 Rev. A
1
www.fairchildsemi.com
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Typical Performance Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve for FCP7N60
100
D =0.5
0 .2
0.1
1 0 -1
0.05
0.02
0 .0 1
single pu lse
1 0 -2
Notes :
1. Z (t) =
θ JC
1 .5°C /W
Max.
2. D uty F actor, D =t /t
12
3. T - T = P * Z (t)
JM C
DM θJC
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t , S q ua re W a ve P u lse D u ra tio n [sec]
1
101
Figure 11-2. Transient Thermal Response Curve for FCPF7N60
D =0.5
100
0.2
0 .1
0 .0 5
1 0 -1
0 .0 2
0.01
sing le pulse
1 0 -2
Notes :
1.
Z (t)
θ JC
4.0°C /W
M ax.
2. D u ty F actor, D =t /t
12
3. T - T = P * Z (t)
JM C
DM θJC
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t , S q ua re W a ve P u lse D u ra tio n [sec]
1
101
FCP7N60 / FCPF7N60 Rev. A
5
www.fairchildsemi.com
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for FCPF7N60 electronic component. |
| Information | Total 10 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Product Image and Detail view |  1. - 600V, 7A, MOSFET, Transistor [ Learn More ] | |
| Download | [ FCPF7N60.PDF Datasheet ] | |
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