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Número de pieza | FC807 | |
Descripción | High-Speed Switching Composite Diode Anode Common | |
Fabricantes | Sanyo Semicon Device | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FC807 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! Ordering number:EN4337A
FC807
Silicon Epitaxial Planar Type
High-Speed Switching Composite Diode
(Anode Common)
Features
· Composite type with 4diodes contined in the CP
package currently in use, improving the mouting
efficiency greatly.
· Fast switching speed.
Package Dimensions
unit:mm
1249A
[FC807]
1:Cathode
2:Cathode
3:Cathode
4:Anode
5:Cathode
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Peak Reverse Voltage
Reverse Voltage
Surge Current
Average Rectified Current
Peak Forward Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VRM
VR
IFSM
IO*
IFM*
P*
Tj
Tstg
10ms*
Note*:Unit rating. The total rating is 150% of the unit rating.
Electrical Characteristics at Ta = 25˚C
Conditions
SANYO:CP5
Ratings
85
80
2
100
300
200
150
–55 to +150
Unit
V
V
A
mA
mA
mW
˚C
˚C
Parameter
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Symbol
Conditons
VF IF=10mA
IF=100mA
IR VR=50V
VR=80V
C VR=0V, f=1MHz
trr IF=10mA, VR=6V, RL=50Ω, irr=0.1Irp
Ratings
min typ max
Unit
0.72 1.0 V
0.88 1.2 V
0.1 µA
0.5 µA
4.5 9.0 pF
8.0 ns
Note:The specifications shown above are for individual diode.
Marking:807
Electrical Connection
Reverse Recovery Time Test Circuit
1:Cathode
2:Cathode
3:Cathode
4:Anode
5:Cathode
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/12097GI/82093YH (KOTO) X-7218 No.4337-1/2
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet FC807.PDF ] |
Número de pieza | Descripción | Fabricantes |
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