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PDF FC804 Data sheet ( Hoja de datos )
| Número de pieza | FC804 | |
| Descripción | 30V/ 200mA Rectifier | |
| Fabricantes | Sanyo Semicon Device | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de FC804 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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Ordering number :EN3194A
FC804
Silicon Schottky Barrier Diode
30V, 200mA Rectifier
Features
· Low forward voltage (VF max=0.55V) .
· Fast reverse recorvery time (trr max=10ns) .
· Composite type with 2 diodes contained in the CP
package currently in use, improving the mounting
efficiency greatly.
· The FC804 is formed with two chips, each being
equivalent to the SB02–03C, placed in one package.
Package Dimensions
unit:mm
1236A
[FC804]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Repetitive Peak Reverse Voltage
2Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
VRSM
IO
IFSM
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
50MHz sine wave, 1 cycle
Parameter
Symbol
Conditions
Reverse Voltage
Forward Voltage
Reverse Current
Interteminal Capacitance
Reverse Recovery Time
VR IR=50µA
VF IF=200mA
IR VR=15V
C VR=10V, f=1MHz
trr IF=IR= (–) 10mA, See specified Test Circuit
Note) The specifications shown above are for each individual diode.
· Marking:804
trr Test Circuit
Electrical Connection
1:Cathode
2:Cathode
3:Cathode
4:No connection
5:Anode
SANYO:CP5
Ratings
30
35
200
2
–55 to +125
–55 to +125
Unit
V
V
mA
A
˚C
˚C
Ratings
min typ
30
6.3
max
0.55
15
10
Unit
V
V
µA
pF
ns
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22898HA (KT)/53196GI (KOTO) /O259MO, TS No.3194-1/2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet FC804.PDF ] | |
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