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PDF FC803 Data sheet ( Hoja de datos )
| Número de pieza | FC803 | |
| Descripción | 30V/ 70mA Rectifier | |
| Fabricantes | Sanyo Semicon Device | |
| Logotipo |  |
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Ordering number :EN3193A
FC803
Silicon Schottky Barrier Diode
30V, 70mA Rectifier
Features
· Low forward voltage (VF max=0.55V) .
· Fast reverse recorvery time (trr max=10ns) .
· Composite type with 4 diodes contained in the CP
package currently in use, improving the mounting
efficiency greatly.
· The FC803 is formed with twi chips, each being
equivalent to the SB007W03C, placed in one
package.
Package Dimensions
unit:mm
1233A
[FC803]
1:Anode
2:Anode
3:Cathode
4:Anode
5:Anode
6:Cathode
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
VRSM
IO
IFSM
Tj
Tstg
Conditions
50MHz sine wave, 1 cycle
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Reverse Voltage
Forward Voltage
Reverse Current
Interteminal Capacitance
Reverse Recovery Time
VR IR=20µA
VF IF=70mA
IR VR=15V
C VR=10V, f=1MHz
trr IF=IR= (–) 10mA, See specified Test Circuit
Note) The specifications shown above are for each individual diode.
· Marking:803
trr Test Circuit
Electrical Connection
SANYO:CP6
Ratings
30
35
70
2
–55 to +125
–55 to +125
Unit
V
V
mA
A
˚C
˚C
Ratings
min typ
30
3.0
max
0.55
5
10
Unit
V
V
µA
pF
ns
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22898HA (KT)/53196GI (KOTO) /O259MO, TS No.3193-1/2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet FC803.PDF ] | |
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