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PDF FC151 Data sheet ( Hoja de datos )

Número de pieza FC151
Descripción High-Frequency Amp/ Current Mirror Circuit Applications
Fabricantes Sanyo Semicon Device 
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No Preview Available ! FC151 Hoja de datos, Descripción, Manual

Ordering number:EN4652
FC151
PNP Epitaxial Planar Silicon Composite Transistor
High-Frequency Amp, Current Mirror
Circuit Applications
Features
· Composite type with 2 transistors contained in the CP
package currently in use, improving the mounting
efficiency greatly.
· The FC151 is formed with two chips, being equiva-
lent to the 2SA1669, placed in one package.
· Excellent in thermal equilibrium and pair capability.
Package Dimensions
unit:mm
2103A
[FC151]
Electrical Connection
1:Emitter 1
2:Base 1
3:Emitter 2
4:Collector 2
5:Base 2
6:Collector1
1:Emitter 1
2:Base 1
3:Emitter 2
4:Collector 2
5:Base 2
6:Collector1
SANYO:CP6
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Total Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
PC
PT
Tj
Storage Temperature
Tstg
Electrical Characteristics at Ta = 25˚C
1 unit
Conditions
Ratings
–20
–15
–3
–50
200
300
150
–55 to +150
Unit
V
V
V
mA
mW
mW
˚C
˚C
Parameter
Symbol
Conditons
Ratings
min typ max
Unit
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain Ratio
B-E Voltage Difference
ICBO
IEBO
hFE
hFE(small/
large)
VBE(large-
small)
VCB=–15V, IE=0
VEB=–2V, IE=0
VCE=–10V, IC=–5mA
VCE=–10V, IC=–5mA
VCE=–10V, IC=–5mA
–0.1 µA
–0.1 µA
20 100
0.7 0.93
3.0 15 mV
Gain-Bandwidth Product
Output Capacitance
Forward Transfer Gain
Noise Figure
fT
Cob
| S21e |
NF
VCE=–10V, IC=–5mA
VCB=–10V, f=1MHz
VCE=–10V, IC=–5mA, f=0.9GHz
VCE=–10V, IC=–3mA, f=0.9GHz
1.5 3.0
GHz
1.0 1.5 pF
5 dB
2.0 dB
Note:The specifications shown above are for each individual transistor. However, the specifications of hFE(small/large)
and hFE(large-small) are for pair capability
Marking:151
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/41594TH(KOTO) X-7850 No.4652-1/5

1 page




FC151 pdf
FC151
No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
the like, the failure of which may directly or indirectly cause injury, death or property loss.
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
subsidiaries and distributors and all their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant-
eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
are made or implied regarding its use or any infringements of intellectual property rights or other rights of
third parties.
This catalog provides information as of May, 1998. Specifications and information herein are subject to
change without notice.
PS No.4652-5/5

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