DataSheetWiki


FBR2510 fiches techniques PDF

EIC discrete Semiconductors - FAST RECOVERY BRIDGE RECTIFIERS

Numéro de référence FBR2510
Description FAST RECOVERY BRIDGE RECTIFIERS
Fabricant EIC discrete Semiconductors 
Logo EIC discrete Semiconductors 





1 Page

No Preview Available !





FBR2510 fiche technique
FBR2500 - FBR2510
PRV : 50 - 1000 Volts
Io : 25 Amperes
FAST RECOVERY
BRIDGE RECTIFIERS
BR50
FEATURES :
* High case dielectric strength
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Fast switching for high efficiency
MECHANICAL DATA :
* Case : Molded plastic with heatsink integrally
mounted in the bridge encapsulation
* Epoxy : UL94V-O rate flame retardant
* Terminals : plated .25" (6.35 mm). Faston
* Polarity : Polarity symbols marked on case
* Mounting position : Bolt down on heat-sink with
silicone thermal compound between bridge
and mounting surface for maximum heat
transfer efficiency.
* Weight : 17.1 grams
0.728(18.50)
0.688(17.40)
0.570(14.50)
0.530(13.40)
0.685(16.70) 1.130(28.70)
0.618(15.70) 1.120(28.40)
0.658(16.70)
0.618(15.70)
0.032(0.81)
0.028(0.71)
0.310(7.87)
0.280(7.11)
0.210(5.30)
0.200(5.10)
0.252(6.40)
0.248(6.30)
φ 0.100(2.50)
0.090(2.30)
0.905(23.0)
0.826(21.0)
Metal Heatsink
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
SYMBOL
FBR
2500
FBR
2501
FBR
2502
FBR
2504
FBR
2506
FBR
2508
FBR
2510
UNIT
VRRM 50 100 200 400 600 800 1000 Volts
Maximum RMS Voltage
VRMS 35 70 140 280 420 560 700 Volts
Maximum DC Blocking Voltage
VDC 50 100 200 400 600 800 1000 Volts
Maximum Average Forward Current Tc = 55 °C
IF(AV)
25 Amps.
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
IFSM
I2t
300 Amps.
375 A2S
Maximum Forward Voltage drop per Diode at IF = 12.5 Amps. VF
1.3 Volts
Maximum DC Reverse Current
Ta = 25 °C
IR
10 µA
at Rated DC Blocking Voltage
Ta = 100 °C
IR(H)
200 µA
Maximum Reverse Recovery Time (Note 1)
Trr
150
250 500
ns
Typical Thermal Resistance per diode (Note 2)
RθJC
1.45
°C/W
Operating Junction Temperature Range
TJ
- 50 to + 150
°C
Storage Temperature Range
TSTG
- 50 to + 150
°C
Notes :
1 ) Measured with IF = 0.5 Amp., IR = 1 Amp., Irr = 0.25 Amp.
2 ) Thermal Resistance from junction to case with units mounted on a 5" x 6" x 4.9" (12.8cm.x 15.2cm.x 12.4cm.) Al.-Finned Plate.
UPDATE : APRIL 21, 1998

PagesPages 2
Télécharger [ FBR2510 ]


Fiche technique recommandé

No Description détaillée Fabricant
FBR2510 FAST RECOVERY BRIDGE RECTIFIERS EIC discrete Semiconductors
EIC discrete Semiconductors

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche