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PDF FMC7G10US60 Data sheet ( Hoja de datos )
| Número de pieza | FMC7G10US60 | |
| Descripción | Compact & Complex Module | |
| Fabricantes | Fairchild Semiconductor | |
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FMC7G10US60
Compact & Complex Module
October 2001
IGBT
General Description
Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power
modules provide low conduction and switching losses as
well as short circuit ruggedness. They are designed for
applications such as motor control, uninterrupted power
supplies (UPS) and general inverters where short circuit
ruggedness is a required feature.
Features
• UL Certified No. E209204
• Short circuit rated 10us @ TC = 100°C, VGE = 15V
• High speed switching
• Low saturation voltage : VCE(sat) = 2.2 V @ IC = 10A
• High input impedance
• Built in brake and 3 phase rectifier circuit
• Fast & soft anti-parallel FWD
Package Code : 21PM-AA
P P1
GU
GV GW
Applications
• AC & DC motor controls
• General purpose inverters
• Robotics
• Servo controls
R
B EU EV EW
S
U VW
T
GB
N
E
-GU -GV -GW
Internal Circuit Diagram
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Inverter
&
Brake
Converter
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM
PD
TSC
VRRM
IO
IFSM
I2t
TJ
Common
TSTG
VISO
Mounting Torque
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Pulsed Collector Current
@ TC = 25°C
Diode Continuous Forward Current @ TC = 100°C
Diode Maximum Forward Current
Maximum Power Dissipation
Short Circuit Withstand Time
Repetitive Peak Reverse Voltage
@ TC = 25°C
@ TC = 100°C
Average Output Rectified Current
Surge Forward Current
@ 1Cycle at 60Hz, Peak value Non-Repetitive
1 Cycle Surge Current
Operating Junction Temperature
Storage Temperature Range
Isolation Voltage
@ AC 1minute
Mounting part Screw
@ M4
FMC7G10US60
600
± 20
10
20
10
20
36
10
1200
10
100
41
-40 to +150
-40 to +125
2500
1.25
Units
V
V
A
A
A
A
W
us
V
A
A
A2s
°C
°C
V
N.m
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
©2001 Fairchild Semiconductor Corporation
FMC7G10US60 Rev. A4
1 page  
1400
1200
1000
800
600
400
200
0
Common Emitter
VGE = 0V, f = 1MHz
TC = 25℃
Cies
Coes
Cres
1 10
Collector - Emitter Voltage, V [V]
CE
Fig 7. Capacitance Characteristics
1000
Common Emitter
VCC = 300V, VGE = ± 15V
IC = 10A
T = 25℃ ━━
C
TC = 125℃ ------
Toff
Toff
Tf
Tf
100
10 100
Gate Resistance, RG [Ω ]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Common Emitter
V =±
GE
15V,
R
G
=
20Ω
T = 25℃ ━━
C
T = 125℃ ------
C
100
Ton
Tr
10
6
8 10 12 14 16 18 20
Collector Current, IC [A]
Fig 11. Turn-On Characteristics vs.
Collector Current
©2001 Fairchild Semiconductor Corporation
Common Emitter
V = 300V, V = ± 15V
CC GE
I = 10A
C
T = 25℃ ━━
C
T = 125℃ ------
C
100
Ton
Tr
10
10
100
Gate Resistance, RG [Ω ]
Fig 8. Turn-On Characteristics vs.
Gate Resistance
1000
Common Emitter
V = 300V, V = ± 15V
CC GE
I = 10A
C
T = 25℃ ━━
C
TC = 125℃ ------
Eoff
Eon
Eoff
100
10 100
Gate Resistance, RG [Ω ]
Fig 10. Switching Loss vs. Gate Resistance
1000
Common Emitter
V =±
GE
15V,
R
G
=
20Ω
TC = 25℃ ━━
TC = 125℃ ------
Toff
Tf
Toff
Tf
100
6 8 10 12 14 16 18 20
Collector Current, I [A]
C
Fig 12. Turn-Off Characteristics vs.
Collector Current
FMC7G10US60 Rev. A4
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FMC7G10US60.PDF ] | |
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