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FMC6G30US60 fiches techniques PDF

Fairchild Semiconductor - Compact & Complex Module

Numéro de référence FMC6G30US60
Description Compact & Complex Module
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FMC6G30US60 fiche technique
FMC6G30US60
Compact & Complex Module
September 2000
IGBT
General Description
Fairchild IGBT Power Module provides low conduction and
switching losses as well as short circuit ruggedness. It’s
designed for the applications such as motor control, UPS
and general inverters where short-circuit ruggedness is
required.
Features
• Short Circuit rated 10us @ TC = 100°C, VGE = 15V
• High Speed Switching
• Low Saturation Voltage : VCE(sat) = 2.2 V @ IC = 30A
• High Input Impedance
• Built in 3 Phase Rectifier Circuit
• Fast & Soft Anti-Parallel FWD
Package Code : 21PM-BB
P P1
Application
• AC & DC Motor Controls
• General Purpose Inverters
• Robotics
• Servo Controls
GU GV GW
R
EU EV EW
S
U VW
T
NB
GU
GV GW
Internal Circuit Diagram
E
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Inverter
Converter
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM
PD
TSC
VRRM
IO
IFSM
I2t
TJ
Common
TSTG
VISO
Mounting Torque
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Pulsed Collector Current
@ TC = 25°C
Diode Continuous Forward Current @ TC = 100°C
Diode Maximum Forward Current
Maximum Power Dissipation
Short Circuit Withstand Time
Repetitive Peak Reverse Voltage
@ TC = 25°C
@ TC = 100°C
Average Output Rectified Current
Surge Forward Current
@ 1Cycle at 60Hz, Peak value Non-Repetitive
1 Cycle Surge Current
Operating Junction Temperature
Storage Temperature Range
Isolation Voltage
@ AC 1minute
Mounting part Screw
@ M4
FMC7G30US60
600
± 20
30
60
30
60
125
10
1200
30
300
369
-40 to +150
-40 to +125
2500
1.25
Units
V
V
A
A
A
A
W
us
V
A
A
A2s
°C
°C
V
N.m
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
©2000 Fairchild Semiconductor International
FMC6G30US60 Rev. A

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