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PDF FMBL1G200US60 Data sheet ( Hoja de datos )
| Número de pieza | FMBL1G200US60 | |
| Descripción | Molding Type Module | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FMBL1G200US60
Molding Type Module
General Description
Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power
modules provide low conduction and switching losses as
well as short circuit ruggedness. They are designed for
applications such as motor control, uninterrupted power
supplies (UPS) and general inverters where short circuit
ruggedness is a required feature.
Features
• UL Certified No. E209204
• Short circuit rated 10us @ TC = 100°C, VGE = 15V
• High speed switching
• Low saturation voltage : VCE(sat) = 2.2 V @ IC = 200A
• High input impedance
• Fast & soft anti-parallel FWD
Application
• Boost (Step Up) Converter
July 2001
IGBT
Package Code : 7PM-BB
E1/C2
C1 E2
G2 E2
Internal Circuit Diagram
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM
TSC
PD
TJ
Tstg
Viso
Mounting
Torque
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Isolation Voltage
Power Terminals Screw : M5
Mounting Screw : M6
@ TC = 25°C
@ TC = 100°C
@ TC = 100°C
@ TC = 25°C
@ AC 1minute
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
FMBL1G200US60
600
± 20
200
400
200
400
10
830
-40 to +150
-40 to +125
2500
2.0
2.5
Units
V
V
A
A
A
A
us
W
°C
°C
V
N.m
N.m
©2001 Fairchild Semiconductor Corporation
FMBL1G200US60 Rev. A
1 page  
40000
35000
30000
25000
20000
15000
10000
5000
0
0.5
Cies
Coes
Common Emitter
VGE = 0V, f = 1MHz
TC = 25℃
Cres
1 10
Collector - Emitter Voltage, V [V]
CE
30
Fig 7. Capacitance Characteristics
3000
1000
Common Emitter
VCC = 300V, VGE = ± 15V
IC = 200A
TC = 25℃
TC = 125℃
Toff
Tf
100
50
1
10
Gate Resistance, RG [Ω ]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Tf
50
1000
Common Emitter
VCC = 300V, VGE = ± 15V
IC = 200A
TC = 25℃
TC = 125℃
Ton
Tr
100
50
1
10
Gate
Resistance,
R
G
[Ω ]
Fig 8. Turn-On Characteristics vs.
Gate Resistance
50
100000
Common Emitter
V = 300V, V = ± 15V
CC GE
I = 200A
C
T = 25℃
C
T = 125℃
C
10000 Eoff
Eon
1000
1
10
Gate Resistance, RG [Ω ]
50
Fig 10. Switching Loss vs. Gate Resistance
1000
Common Emitter
V = 300V, V = ± 15V
CC GE
RG = 1.8Ω
TC = 25℃
TC = 125℃
Ton
100
Tr
10
30 40 60 80 100 120 140 160 180 200
Collector Current, IC [A]
Fig 11. Turn-On Characteristics vs.
Collector Current
©2001 Fairchild Semiconductor Corporation
1000
Common Emitter
VCC = 300V, VGE = ± 15V
RG = 1.8Ω
T = 25℃
C
T = 125℃
C
Toff
Tf
100
50
30 40 60 80 100 120 140 160 180 200
Collector Current, I [A]
C
Fig 12. Turn-Off Characteristics vs.
Collector Current
FMBL1G200US60 Rev. A
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FMBL1G200US60.PDF ] | |
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