(PDF) FMBA14 Datasheet - NPN Multi-Chip Darlington Transistor

Número de pieza	FMBA14
Descripción	NPN Multi-Chip Darlington Transistor
Fabricantes	Fairchild Semiconductor
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No Preview Available ! Discrete POWER & Signal Technologies FMBA14 C2 E1 C1 B2 E2 pin #1 B1 SuperSOT™-6 Mark: .1N NPN Multi-Chip Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value VCES VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range 30 30 10 1.2 -55 to +150 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic PD Total Device Dissipation Derate above 25°C RθJA Thermal Resistance, Junction to Ambient Max FMBA14 700 5.6 180 Units V V V A °C Units mW mW/°C °C/W © 1998 Fairchild Semiconductor Corporation 1 page

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PDF FMBA14 Data sheet ( Hoja de datos )