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Numéro de référence | FM5822 | ||
Description | Silicon epitaxial planer type | ||
Fabricant | Formosa MS | ||
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1 Page
Chip Schottky Barrier Diodes
FM5820-A THRU FM5822-A
Formosa MS
Silicon epitaxial planer type
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant EpoxyMolding Compound.
For surface mounted applications.
Exceeds environmental standards of MIL-S-19500 /
228
Low leakage current.
Mechanical data
Case : Molded plastic, JEDEC DO-214AC
Terminals : Solder plated, s olderable per MIL-STD-750,
Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : 0.0015 ounce, 0.15 gr am
SMA
0.185(4.8)
0.177(4.4)
0.012(0.3) Typ.
0.110(2.8)
0.094(2.4)
0.165(4.2)
0.150(3.8)
0.040(1.0) Typ.
0.067(1.7)
0.060(1.5)
0.040 (1.0) Typ.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (AT TA=25oC unless otherwise noted)
PARAMETER
CONDITIONS
Forward rectified current
See Fig.1
Forward surge current
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
Reverse current
Thermal resistance
Diode junction capacitance
Operating temperature
VR = VRRM TA = 25oC
VR = VRRM TA = 125oC
Junction to ambient
f=1MHz and applied 4vDC reverse voltage
Symbol
IO
IFSM
IR
RqJA
CJ
TSTG
MIN.
-55
TYP.
250
MAX.
3.0
UNIT
A
80 A
2.0
20
80
+150
mA
mA
oC / w
pF
oC
SYMBOLS
FM5820
FM5821
FM5822
MARKING
CODE
SK32
SK33
SK34
VRRM *1
(V)
20
30
40
VRMS *2
(V)
14
21
28
VR *3
(V)
20
30
40
VF *4
(V)
0.475
0.500
0.525
Storage
temperature
(oC)
-55 to +125
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage
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Pages | Pages 2 | ||
Télécharger | [ FM5822 ] |
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