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Datasheet FK10VS-10-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
FK1 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | FK1001-7R | 150 Watt DC-DC Converters K Series
150 Watt DC-DC Converters
Input voltage ranges from 8…385 V DC 1or 2 outputs up to 48 V DC 4 kV AC I/O electric strength test voltage
LGA
• Rugged electrical and mechanical design • Fully isolated outputs • Operating ambient temperature range –40...71 °C with convection cooling  Power-One converter | | |
| 2 | FK10KM-10 | HIGH-SPEED SWITCHING USE MITSUBISHI Nch POWER MOSFET
FK10KM-10
HIGH-SPEED SWITCHING USE
FK10KM-10
OUTLINE DRAWING
10 ± 0.3
6.5 ± 0.3 3 ± 0.3
Dimensions in mm
2.8 ± 0.2
15 ± 0.3
φ 3.2 ± 0.2
14 ± 0.5
3.6 ± 0.3
1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15
0.75 ± 0.15
2.54 ± 0.25
2.54 ± 0.25
4.5 ± 0.2
1 2 3
2.6  Mitsubishi Electric Semiconductor data | | |
| 3 | FK10KM-12 | HIGH-SPEED SWITCHING USE MITSUBISHI Nch POWER MOSFET
FK10KM-12
HIGH-SPEED SWITCHING USE
FK10KM-12
OUTLINE DRAWING
10 ± 0.3 6.5 ± 0.3 3 ± 0.3
Dimensions in mm
2.8 ± 0.2
15 ± 0.3
φ 3.2 ± 0.2
14 ± 0.5
3.6 ± 0.3
1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15
0.75 ± 0.15
2.54 ± 0.25
2.54 ± 0.25 4.5 ± 0.2 q GATE w DR Mitsubishi Electric Semiconductor data | | |
| 4 | FK10KM-12 | HIGH-SPEED SWITCHING USE MITSUBISHI Nch POWER MOSFET
FK10KM-12
HIGH-SPEED SWITCHING USE
FK10KM-12
OUTLINE DRAWING
10 ± 0.3 6.5 ± 0.3 3 ± 0.3
Dimensions in mm
2.8 ± 0.2
15 ± 0.3
φ 3.2 ± 0.2
14 ± 0.5
3.6 ± 0.3
1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15
0.75 ± 0.15
2.54 ± 0.25
2.54 ± 0.25 4.5 ± 0.2 q GATE w DR  Powerex Power Semiconductors data | | |
| 5 | FK10KM-9 | HIGH-SPEED SWITCHING USE MITSUBISHI Nch POWER MOSFET
FK10KM-9
HIGH-SPEED SWITCHING USE
FK10KM-9
OUTLINE DRAWING
10 ± 0.3 6.5 ± 0.3 3 ± 0.3
Dimensions in mm
2.8 ± 0.2
15 ± 0.3
φ 3.2 ± 0.2
14 ± 0.5
3.6 ± 0.3
1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15
0.75 ± 0.15
2.54 ± 0.25
2.54 ± 0.25 4.5 ± 0.2 q GATE w DRAI Mitsubishi Electric Semiconductor data | | |
| 6 | FK10KM-9 | HIGH-SPEED SWITCHING USE MITSUBISHI Nch POWER MOSFET
FK10KM-9
HIGH-SPEED SWITCHING USE
FK10KM-9
OUTLINE DRAWING
10 ± 0.3 6.5 ± 0.3 3 ± 0.3
Dimensions in mm
2.8 ± 0.2
15 ± 0.3
φ 3.2 ± 0.2
14 ± 0.5
3.6 ± 0.3
1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15
0.75 ± 0.15
2.54 ± 0.25
2.54 ± 0.25 4.5 ± 0.2 q GATE w DRAI Powerex Power Semiconductors data | | |
| 7 | FK10SM-10 | HIGH-SPEED SWITCHING USE MITSUBISHI Nch POWER MOSFET
FK10SM-10
HIGH-SPEED SWITCHING USE
FK10SM-10
OUTLINE DRAWING
15.9MAX.
Dimensions in mm
4.5 1.5
r
2
2
4
20.0
φ 3.2
5.0
1.0 q 5.45 w e 5.45
19.5MIN.
4.4
0.6
2.8
4 wr q GATE w DRAIN e SOURCE r DRAIN e
¡VDSS ................................................. Mitsubishi Electric Semiconductor data | |
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| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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