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Numéro de référence | FJX3013R | ||
Description | Switching Application | ||
Fabricant | Fairchild Semiconductor | ||
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1 Page
FJX3013R
Switching Application (Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R1 =2.2KΩ, R2=47KΩ)
• Complement to FJX4013R
Marking
3
2
1 SOT-323
1. Base 2. Emitter 3. Collector
Equivalent Circuit
C
S13
R1
B
R2
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
ICBO
hFE
VCE (sat)
fT
Cob
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
IC=10µA, IE=0
IC=100µA, IB=0
VCB=40V, IE=0
VCE=5V, IC=5mA
IC=10mA, IB=0.5mA
VCE=10V, IC=5mA
VCB=10V, IE=0
f=1.0MHz
VI(off)
VI(on)
R1
R1/R2
Input Off Voltage
Input On Voltage
Input Resistor
Resistor Ratio
VCE=5V, IC=100µA
VCE=0.2V, IC=5mA
Value
50
50
10
100
200
150
-55 ~ 150
E
Units
V
V
V
mA
mW
°C
°C
Min.
50
50
68
Typ.
250
3.7
Max.
0.1
Units
V
V
µA
0.3 V
MHz
pF
0.5
1.5
0.042
2.2
0.047
1.1
2.9
0.052
V
V
KΩ
©2002 Fairchild Semiconductor Corporation
Rev. A3, August 2002
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Pages | Pages 3 | ||
Télécharger | [ FJX3013R ] |
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