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PDF FJX2907 Data sheet ( Hoja de datos )
| Número de pieza | FJX2907 | |
| Descripción | General Purpose Transistor | |
| Fabricantes | Fairchild Semiconductor | |
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FJX2907A
General Purpose Transistor
3
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCES
VEBO
IC
PC
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Storage Temperature
2
1 SOT-323
1. Base 2. Emitter 3. Collector
Value
-60
-60
-5
-600
325
150
Units
V
V
V
mA
mW
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
BVCBO
BVCEO
BVEBO
ICBO
hFE
Parameter
Collector-Base Breakdown Voltage
* Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
VCE (sat)
VBE (sat)
fT
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Test Condition
IC= -10µA, IE=0
IC= -10mA, IB=0
IE= -10µA, IC=0
VCB= -50V, IE=0
VCE= -10V, IE= -0.1mA
VCE= -10V, IC= -1.0mA
VCE= -10V, IC= -10mA
*VCE= -10V, IC= -150mA
*VCE= -10V, IC= -500mA
IC= -150mA, IB= -15mA
IC= -500mA, IB= -50mA
IC= -150mA, IB= -15mA
IC= -500mA, IB= -50mA
IC= -50mA, VCE= -20V,
f=100MHz
Cob Output Capacitance
VCB= -10V, IE=0
f=1.0MHz
tON Turn On Time
tOFF
Turn Off Time
* Pulse Test: PW≤300µs, Duty Cycle≤2%
VCC= -30V, IC= -150mA
IB1= -15mA
VCC= -6V, IC= -150mA
IB1=IB2=15mA
Marking
Min.
Max. Units
-60 V
-60 V
-5 V
-0.01
µA
75
100
100
100 300
50
-0.4 V
-1.6 V
-1.3 V
-2.6 V
200 MHz
8 pF
45 ns
100 ns
S2F
©2002 Fairchild Semiconductor Corporation
Rev. B1, August 2002
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet FJX2907.PDF ] | |
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