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Fairchild Semiconductor - Ultra Low Leakage Diode

Numéro de référence FJH1100
Description Ultra Low Leakage Diode
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FJH1100 fiche technique
FJH1100
Information Only Data Sheet
FINAL REVERSE CURRENT & FORWARD VOLTAGE LIMITS MIGHT BE INCREASED SLIGHTLY
General Description:
An Ultra Low Leakage Diode in the DO-35 package.
The forward voltage is typically greater than 0.5 volts
at 1.0 micro-ampere.
This product is light sensitive, any damage to the body
Ultra Low Leakage Diode
coating will affect the reverse leakage when exposed to
light.
Absolute Maximum Ratings* TA = 25OC unless otherwise noted
Sym
Parameter
Value
Units
Tstg
TJ
PD
ROJA
Wiv
IF
Storage Temperature
Operating Junction Temperature
Total Power Dissipation at TA = 25OC
Linear Derating Factor from TA = 25OC
Thermal Resistance Junction-to-Ambient
Working Inverse Voltage
DC Forward Current (IF)
-55 to +200
175
250
1.67
300
15
150
OC
OC
mW
mW/OC
OC/W
V
mA
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired
0.500 Minimum
12.70 Typ 1.000
0.022 (0.558) Diameter
0.018 (0.458) Typ 20 mils
CATHODE
BAND
LOGO
FJH
11
00
0.200 (5.08)
0.120 (3.05)
0.090 (2.28) Diameter
0.060 (1.53)
Typical Forward Voltages
1.0 uA - - - - - - - - - - 530 mV
10 uA - - - - - - - - - - 605 mV
100 uA - - - - - - - - - - 685 mV
1.0 mA- - - - - - - - - - 780 mV
10 mA- - - - - - - - - - 895 mV
50 mA- - - - - - - - - - 995 mV
100 mA- - - - - - - - - - 1.07 V
Electrical Characteristics TA = 25OC unless otherwise noted
SYM
BV
IR
CHARACTERISTICS
Breakdown Voltage
Reverse Leakage
VF Forward Voltage
CT Diode Capacitance
MIN MAX UNITS
TEST CONDITIONS
30 V IR = 5.0 uA
3.0 pA
10 pA
VR = 5.0 V
VR = 15 V
1.05 V
IF = 50 mA
2.0 pF
VR = 0 V, f = 1.0 MHz
© 1999 Fairchild Semiconductor Corporation
FJH1100 - Rev. A

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