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Número de pieza | FGS15N40L | |
Descripción | Electrical Characteristics of IGBT | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FGS15N40L (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! FGS15N40L
September 2001
IGBT
General Description
Insulated Gate Bipolar Transistors(IGBTs) with trench
gate structure have superior performance in conductance
and switching to planar gate structure and also have wide
noise immunity. These devices are well suitable for
strobe application
Features
• High Input Impedance
• High Peak Current Capability (130A)
• Easy Gate Drive
Application
• Strobe Flash
C
C
C
C
8-SOP
G
E
E
E
Absolute Maximum Ratings TC = 25°C unless otherrwise noted
Symbol
VCES
VGES
ICM (1)
PC
TJ
Tstg
TL
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Pulsed Collector Current
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
PurPoses from case for 5 secnds
@ Ta = 25°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
C
G
E
FGS15N40L
400
±6
130
2.0
-40 to +150
-40 to +150
300
Thermal Characteristics
Symbol
RθJA
Parameter
Thermal Resistance, Junction-to-Ambient(PCB Mount)
Notes: Mounted on 1” square PCB(FR4 or G-10 Material)
Typ.
--
Max.
62.5
Units
V
V
A
W
°C
°C
°C
Units
°C/W
©2001 Fairchild Semiconductor Corporation
FGS15N40L Rev. A1
1 page Package Dimension
8-SOP
1.55 ±0.20
0.061 ±0.008
MIN
0.1~0.25
0.004~0.001
#1 #8
#4 #5
6.00 ±0.30
0.236 ±0.012
3.95 ±0.20
0.156 ±0.008
1.80
0.071
MAX
0.50 ±0.20
0.020 ±0.008
5.72
0.225
©2001 Fairchild Semiconductor Corporation
Dimensions in Millimeters
FGS15N40L Rev. A1
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet FGS15N40L.PDF ] |
Número de pieza | Descripción | Fabricantes |
FGS15N40L | Electrical Characteristics of IGBT | Fairchild Semiconductor |
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