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PDF FGL60N100BNTD Data sheet ( Hoja de datos )
| Número de pieza | FGL60N100BNTD | |
| Descripción | NPT-Trench IGBT | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FGL60N100BNTD
1000 V, 60 A NPT Trench IGBT
Features
• High Speed Switching
• Low Saturation Voltage: VCE(sat) = 2.5 V @ IC = 60 A
• High Input Impedance
• Built-in Fast Recovery Diode
Applications
• UPS, Welder
March 2014
General Description
Using Fairchild's proprietary trench design and advanced NPT
technology, the 1000V NPT IGBT offers superior conduction
and switching performances, high avalanche ruggedness and
easy parallel operation. This device offers the optimum perfor-
mance for hard switching application such as UPS, welder
applications.
GCE
TO-264 3L
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
IF
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RJC(IGBT)
RJC(Diode)
RJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
©2000 Fairchild Semiconductor Corporation
FGL60N100BNTD Rev. C2
1
C
G
E
Ratings
1000
25
60
42
200
15
180
72
-55 to +150
-55 to +150
300
Unit
V
V
A
A
A
A
W
W
oC
oC
oC
Ratings
0.69
2.08
25
Unit
oC/W
oC/W
oC/W
www.fairchildsemi.com
1 page  
Typical Performance Characteristics
Figure 13. Reverse Recovery Characteristics Figure 14. Reverse Recovery Characteristics
vs. di/dt
vs. Forward Current
1.19
1.02
0.85
0.68
0.51
0.34
0.17
0.00
0
IF=60A
TC=25?
119
102
85
trr 68
51
34
Irr 17
0
40 80 120 160 200 240
di/dt [A/us]
1.2
1.0
0.8
0.6
0.4
10
trr
Irr
d i/d t= -2 0 A /u s
TC=25?
12
10
8
6
20 30 40 50
Forward Current, I [A]
F
4
60
Figure 15. Reverse Current vs. Reverse Voltage Figure 16. Junction Capacitance
1000
250
100
10
1
0.1
0.01
TC = 150℃
TC= 25℃
200
150
100
50
TC = 25 ℃
1E-3
0
300 600
Reverse Voltage, VR [V]
900
0
0.1
1 10
Reverse Voltage, VR [V]
100
Figure 17.Transient Thermal Impedance of IGBT
10
1
0 .1
0 .0 1
0 .5
0 .2
0 .1
0 .0 5
0 .0 2
0 .0 1
PDM
t1
t2
1 E -3
s in g le p u ls e
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
R e c ta n g u la r P u ls e D u r a tio n [s e c ]
101
©2000 Fairchild Semiconductor Corporation
FGL60N100BNTD Rev. C2
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet FGL60N100BNTD.PDF ] | |
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