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PDF FGL40N150 Data sheet ( Hoja de datos )
| Número de pieza | FGL40N150 | |
| Descripción | Electrical Characteristics of the IGBT | |
| Fabricantes | Fairchild Semiconductor | |
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FGL40N150D
IGBT
General Description
Fairchild’s Insulated Gate Bipolar Transistor (IGBT)
provides low conduction and switching losses.
The FGL40N150D is designed for induction heating
applications.
Features
• High speed switching
• Low saturation voltage : VCE(sat) = 3.5 V @ IC = 40A
• High input impedance
• Built-in fast recovery diode
Applications
Home appliances, induction heaters, IH JAR, and microwave ovens.
C
GC E
TO-264
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM
PD
TJ
Tstg
TL
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25°C
@ TC = 100°C
Diode Continuous Forward Current
Diode Maximum Forward Current
@ TC = 100°C
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25°C
@ TC = 100°C
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(DIODE)
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
G
E
FGL40N150D
1500
± 25
40
20
120
10
100
200
80
-55 to +150
-55 to +150
300
Typ.
--
--
--
Max.
0.625
0.83
25
Units
V
V
A
A
A
A
A
W
W
°C
°C
°C
Units
°C/W
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
FGL40N150D Rev. A1
1 page  
16
Common Emitter
14
R
L
=
15Ω,
V
CC
=
600V
T = 25oC
C
12
10
8
6
4
2
0
0 25 50 75 100
Gate Charge, Qg [nC]
125
150
Fig 13. Gate Charge Characteristics
500
450
400
350
300
250
200
150
100
50
0
0
IF = 10A
50 100 150 200 250 300
di/dt [A/us]
Fig 15. Typical Trr vs. di/dt
100 Ic MAX (Pulsed)
Ic MAX (Continuous)
50µs
100µs
10
1ms
DC Operation
1
Single Nonrepetitive
Pulse Tc = 25oC
0.1 Curves must be derated
linearly with increase
in temperature
0.01
0.1
1
10 100 1000
Collector - Emitter Voltage, VCE [V]
Fig 14. SOA Characteristics
300
270
240
210 di/dt = 50A/us
180
100A/us
150
200A/us
120
90
60
30
0 1 2 3 4 5 6 7 8 9 10
Forward Current, IF [A]
Fig 16. Typical Trr vs. Forward Current
1000
100
10
T = 125℃
C
1 100℃
0.1 25℃
0.01
1E-3
300.0
600.0
900.0
1.2k
Reverse Voltage, V R [V]
1.5k
Fig 17. Reverse Current vs. Reverse Voltage
©2002 Fairchild Semiconductor Corporation
100
10
T =125℃
C
25℃
1
0.1
0.4
0.6 0.8 1.0 1.2
Instantaneous Voltage, V F [V]
1.4
1.6
Fig 18. Typical Forward Voltage Drop
vs. Forward Current
FGL40N150D Rev. A1
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet FGL40N150.PDF ] | |
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