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PDF FGH60N6S2 Data sheet ( Hoja de datos )
| Número de pieza | FGH60N6S2 | |
| Descripción | 600V/ SMPS II Series N-Channel IGBT | |
| Fabricantes | Fairchild Semiconductor | |
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August 2003
FGH60N6S2
600V, SMPS II Series N-Channel IGBT
General Description
The FGH60N6S2 is a Low Gate Charge, Low Plateau Volt-
age SMPS II IGBT combining the fast switching speed of
the SMPS IGBTs along with lower gate charge and plateau
voltage and avalanche capability (UIS). These LGC devices
shorten delay times, and reduce the power requirement of
the gate drive. These devices are ideally suited for high volt-
age switched mode power supply applications where low
conduction loss, fast switching times and UIS capability are
essential. SMPS II LGC devices have been specially de-
signed for:
• Power Factor Correction (PFC) circuits
• Full bridge topologies
• Half bridge topologies
• Push-Pull circuits
• Uninterruptible power supplies
• Zero voltage and zero current switching circuits
Formerly Developmental Type TA49346.
Features
• 100kHz Operation at 390V, 52A
• 200kHZ Operation at 390V, 31A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . 77ns at TJ = 125oC
• Low Gate Charge . . . . . . . . 140nC at VGE = 15V
• Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical
• UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 700mJ
• Low Conduction Loss
Package
TO-247
E
C
G
Symbol
C
G
COLLECTOR
(Back-Metal)
E
Device Maximum Ratings TC= 25°C unless otherwise noted
Symbol
Parameter
Ratings
Units
BVCES Collector to Emitter Breakdown Voltage
600 V
IC25 Collector Current Continuous, TC = 25°C
75 A
IC110
Collector Current Continuous, TC = 110°C
75 A
ICM Collector Current Pulsed (Note 1)
320 A
VGES
Gate to Emitter Voltage Continuous
±20 V
VGEM Gate to Emitter Voltage Pulsed
±30 V
SSOA Switching Safe Operating Area at TJ = 150°C, Figure 2
200A at 600V
EAS Pulsed Avalanche Energy, ICE = 20A, L = 1.3mH, VDD = 50V
700 mJ
PD Power Dissipation Total TC = 25°C
625 W
Power Dissipation Derating TC > 25°C
5 W/°C
TJ Operating Junction Temperature Range
-55 to 150
°C
TSTG
Storage Junction Temperature Range
-55 to 150
°C
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
©2003 Fairchild Semiconductor Corporation
FGH60N6S2 Rev. A2
1 page  
Typical Performance Curves TJ = 25°C unless otherwise noted
200
DUTY CYCLE < 0.5%, VCE = 10V
175 PULSE DURATION = 250µs
150
125
100
TJ = 25oC
75
50
TJ = 125oC
25
TJ = -55oC
0
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5
VGE, GATE TO EMITTER VOLTAGE (V)
Figure 13. Transfer Characteristic
8.0
5
RG = 3Ω, L = 100µH, VCE = 390V, VGE = 15V
ETOTAL = EON2 + EOFF
4
ICE = 80A
3
2
ICE = 40A
1
ICE = 20A
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (oC)
Figure 15. Total Switching Loss vs Case
Temperature
16
IG(REF) = 1mA, RL = 7.5Ω
14
12
10
VCE = 600V
8
VCE = 400V
6
4 VCE = 200V
2
0
0 20 40 60 80 100 120 140
QG, GATE CHARGE (nC)
Figure 14. Gate Charge
100
TJ = 125oC, L = 100µH, VCE = 390V, VGE = 15V
ETOTAL = EON2 + EOFF
10
ICE = 80A
1 ICE = 40A
ICE = 20A
0.1
1
10 100 1000
RG, GATE RESISTANCE (Ω)
Figure 16. Total Switching Loss vs Gate
Resistance
10
FREQUENCY = 1MHz
CIES
2.8
DUTY CYCLE < 0.5%
PULSE DURATION = 250µs
2.6
1 2.4
COES
0.1
CRES
0.01
0
20 40 60 80
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
100
Figure 17. Capacitance vs Collector to Emitter
Voltage
2.2 ICE = 60A
2.0
ICE = 40A
1.8
1.6
6
ICE = 20A
789
10 11 12 13 14 15 16
VGE, GATE TO EMITTER VOLTAGE (V)
Figure 18. Collector to Emitter On-State Voltage vs
Gate to Emitter Voltage
©2003 Fairchild Semiconductor Corporation
FGH60N6S2 Rev. A2
5 Page | ||
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