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PDF LX723 Data sheet ( Hoja de datos )
| Número de pieza | LX723 | |
| Descripción | SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR | |
| Fabricantes | Polyfet RF Devices | |
| Logotipo |  |
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polyfet rf devices
LX723
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Militry Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
TM
"Polyfet" process features
low feedback and output capacitances
resulting in high F t transistors with high
input impedance and high efficiency.
SILICON GATE ENHANCEMENT MODE
RF POWER LDMOS TRANSISTOR
45.0 Watts Single Ended
Package Style LX2
HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE
Total
Device
Dissipation
220 Watts
Junction to
Case Thermal
Resistance
o
0.75 C/W
ABSOLUTE MAXIMUM RATINGS ( T = 25 oC )
Maximum
Junction
Temperature
200 oC
Storage
Temperature
oo
-65 C to 150 C
DC Drain
Current
22.0 A
Drain to
Gate
Voltage
50 V
Drain to
Source
Voltage
50 V
Gate to
Source
Voltage
20 V
RF CHARACTERISTICS ( 45.0 WATTS OUTPUT )
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Gps Common Source Power Gain
η Drain Efficiency
10
55
dB Idq = 0.80 A, Vds = 12.5 V, F = 500MHz
% Idq = 0.80 A, Vds = 12.5 V, F = 500 MHz
VSWR Load Mismatch Tolerance
20:1 Relative Idq = 0.80 A, Vds = 12.5 V, F = 500MHz
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Bvdss
Idss
Drain Breakdown Voltage
Zero Bias Drain Current
40 V Ids = 0.60 mA, Vgs = 0V
6.0 mA
Vds = 12.5 V, Vgs = 0V
Igss Gate Leakage Current
1 uA
Vds = 0V Vgs = 30V
Vgs Gate Bias for Drain Current
1
7V
Ids = 0.60 A, Vgs = Vds
gM Forward Transconductance
5.1 Mho Vds = 10V, Vgs = 5V
Rdson Saturation Resistance
0.20
Ohm
Vgs = 20V, Ids =16.00 A
Idsat
Saturation Current
39.00
Amp Vgs = 20V, Vds = 10V
Ciss Common Source Input Capacitance
150.0
pF Vds = 12.5 Vgs = 0V, F = 1 MHz
Crss
Common Source Feedback Capacitance
6.0 pF Vds = 12.5 Vgs = 0V, F = 1 MHz
Coss Common Source Output Capacitance
120.0
pF Vds = 12.5 Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 04/27/2001
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet LX723.PDF ] | |
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