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PDF LX5503 Data sheet ( Hoja de datos )
| Número de pieza | LX5503 | |
| Descripción | InGaP HBT 5-6GHz Power Amplifier | |
| Fabricantes | Microsemi Corporation | |
| Logotipo |  |
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LX5503
TM ® InGaP HBT 5-6GHz Power Amplifier
PRODUCTION DATA SHEET
DESCRIPTION
The LX5503 is a power amplifier For +18dBm OFDM output power
optimized for the FCC Unlicensed (64QAM, 54Mbps), the PA provides a
National Information Infrastructure very low EVM (Error-Vector
(U-NII) band and HiperLAN2 Magnitude) of 4%, and consumes less
applications in the 5.15-5.85GHz than 200mA total DC current.
frequency range. The PA is im- The LX5503 is available in a 16-pin
plemented as a two-stage monolithic 3mmx3mm micro-lead package (MLP).
microwave integrated circuit (MMIC) The compact footprint, low profile, and
with active bias and input/output pre- excellent thermal capability of the MLP
matching. The device is manufactured package makes the LX5503 an ideal
with an InGaP/GaAs Heterojunction solution for broadband, medium-gain
Bipolar Transistor (HBT) IC process power amplifier requirements for IEEE
(MOCVD). It operates at a single low 802.11a, and Hiperlan2 portable WLAN
voltage supply of 3.3V with +25dBm applications.
of P1dB and 22dB power gain
between 5.15-5.35GHz and 18dB gain
up to 5.85GHz.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
KEY FEATURES
Advanced InGaP HBT
5.15-5.85GHz Operation
Single-Polarity 3.3V Supply
Low Quiescent Current Icq
~100mA
P1dB ~ +25dBm across
5.15~5.85GHz
Power Gain ~ 22dB at 5.25GHz
& Pout=18dBm
Power Gain ~ 18dB at 5.85GHz
& Pout=18dBm
Total Current < 200mA for
Pout=18dBm
EVM ~ 4% for 64QAM/ 54Mbps
& Pout=18dBm
Excellent Temperature
Performance
Simple Input/Output Match
Minimal External Components
Small Footprint: 3x3mm2
Low Profile: 0.9mm
APPLICATIONS/BENEFITS
FCC U-NII Wireless
IEEE 802.11a
HiperLAN2
PRODUCT HIGHLIGHT
Copyright © 2000
Rev. 1.2d, 8/18/2005
PACKAGE ORDER INFO
LQ
Plastic
16-Pin
LX5503LQ
RoHS Compliant / Pb-free Transition DC: 0418
Note: Available in Tape & Reel (3K parts per reel). Append the
letters “TR” to the part number. (i.e. LX5503LQ-TR)
This device is classified as ESD Level 1 in accordance with MIL-
STD-883, Method 3015 (HBM) testing. Appropriate ESD
procedures should be observed when handling this device.
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 1
1 page  
LX5503
TM ® InGaP HBT 5-6GHz Power Amplifier
PRODUCTION DATA SHEET
CHARTS
Typical EVM & Total Current vs. Output Power
(Vc=3.3V, Vref=2.86V, Icq=100mA, 64QAM/54Mbps)
8 300
7
EVM_in
EVM_out
Ictotal
6
250
5
4 200
Freq.=5.15GHz
3
2 150
1
0 100
12 13 14 15 16 17 18 19 20 21
Pout (dBm)
8 300
7 EVM_in
EVM_out
6 Ictotal
250
5
4 200
Freq.=5.25GHz
3
2 150
1
0 100
12 13 14 15 16 17 18 19 20 21
Pout (dBm)
8 300
7 EVM_in
EVM_out
6 Ictotal
5
250
4 200
Freq.=5.85GHz
3
2 150
1
0 100
9 10 11 12 13 14 15 16 17 18 19 20
Pout (dBm)
Copyright © 2000
Rev. 1.2d, 8/18/2005
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 5
5 Page 
LX5503
TM ® InGaP HBT 5-6GHz Power Amplifier
PRODUCTION DATA SHEET
CHARTS
Small-Signal Gain vs. Supply Voltage
(Vref=2.86V, Icq=100mA for Vc=3.3V)
22
21.5
21
20.5
20
3
27
26.5
26
25.5
25
24.5
24
3
3.1 3.2 3.3 3.4
Vc (V)
P1dB vs. Supply Voltage
(Vref=2.86V, Icq=100mA for Vc=3.3V)
3.5
3.6
3.3
Vc (V)
3.6
Copyright © 2000
Rev. 1.2d, 8/18/2005
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 11
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet LX5503.PDF ] | |
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