(PDF) 3SK319 Datasheet - Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier

Número de pieza	3SK319
Descripción	Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier
Fabricantes	Hitachi Semiconductor
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No Preview Available ! 3SK319 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V Outline Note: Marking is “YB–”. MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain ADE-208-602(Z) 1st. Edition February 1998 1 page Noise Figure vs. Drain to Source Voltage 5 V G2S = 3 V I D = 10 mA 4 f = 900 MHz 3 2 1 0 2 4 6 8 10 Drain to Source Voltage VDS (V) 3SK319 Power Gain vs. Gate2 to Source Voltage 25 VDS = 3.5 V f = 900MHz 20 15 10 5 0 1 2345 Gate2 to Source Voltage VG2S (V) Noise Figure vs. Gate2 to Source Voltage 5 VDS = 3.5 V 4 f = 900MHz 3 2 1 0 1 2345 Gate2 to Source Voltage VG2S (V) 5 5 Page

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PDF 3SK319 Data sheet ( Hoja de datos )