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Numéro de référence | 3SK309 | ||
Description | GaAs N Channel Dual Gate MES FET UHF RF Amplifier | ||
Fabricant | Hitachi Semiconductor | ||
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1 Page
3SK309
GaAs N Channel Dual Gate MES FET
UHF RF Amplifier
Features
• Capable of low voltage operation (VDS = 1.5 to 3 V)
• Excellent low noise characteristics (NF = 1.25 dB typ. at f = 900 MHz)
• High power gain (PG = 21.0 dB typ. at f = 900 MHz)
Outline
CMPAK–4
2
3
1
4
1. Source
2. Gate1
3. Gate2
4. Drain
ADE-208-472 A
2nd. Edition
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Pages | Pages 11 | ||
Télécharger | [ 3SK309 ] |
No | Description détaillée | Fabricant |
3SK300 | Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier | Hitachi Semiconductor |
3SK309 | GaAs N Channel Dual Gate MES FET UHF RF Amplifier | Hitachi Semiconductor |
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