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Hitachi Semiconductor - GaAs N Channel Dual Gate MES FET UHF RF Amplifier

Numéro de référence 3SK309
Description GaAs N Channel Dual Gate MES FET UHF RF Amplifier
Fabricant Hitachi Semiconductor 
Logo Hitachi Semiconductor 





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3SK309 fiche technique
3SK309
GaAs N Channel Dual Gate MES FET
UHF RF Amplifier
Features
Capable of low voltage operation (VDS = 1.5 to 3 V)
Excellent low noise characteristics (NF = 1.25 dB typ. at f = 900 MHz)
High power gain (PG = 21.0 dB typ. at f = 900 MHz)
Outline
CMPAK–4
2
3
1
4
1. Source
2. Gate1
3. Gate2
4. Drain
ADE-208-472 A
2nd. Edition

PagesPages 11
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