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Numéro de référence | 3SK298 | ||
Description | Silicon N-Channel Dual Gate MOS FET | ||
Fabricant | Hitachi Semiconductor | ||
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1 Page
3SK298
Silicon N-Channel Dual Gate MOS FET
Application
UHF / VHF RF amplifier
Features
• Low noise figure.
NF = 1.0 dB typ. at f = 200 MHz
• Capable of low voltage operation
Outline
CMPAK–4
2
3
1
4
1. Source
2. Gate1
3. Gate2
4. Drain
ADE-208-390
1st. Edition
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Pages | Pages 11 | ||
Télécharger | [ 3SK298 ] |
No | Description détaillée | Fabricant |
3SK290 | Silicon N-Channel Dual Gate MOS FET | Hitachi Semiconductor |
3SK291 | N CHANNEL DUAL GATE MOS TYPE (TV TUNER/ UHF RF AMPLIFIER APPLICATIONS) | Toshiba Semiconductor |
3SK292 | N CHANNEL DUAL GATE MOS TYPE (TV TUNER/ VHF RF AMPLIFIER APPLICATIONS) | Toshiba Semiconductor |
3SK293 | N CHANNEL DUAL GATE MOS TYPE (TV TUNER/ UHF RF AMPLIFIER APPLICAITONS) | Toshiba Semiconductor |
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