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PDF 3SK295 Data sheet ( Hoja de datos )
| Número de pieza | 3SK295 | |
| Descripción | Silicon N-Channel Dual Gate MOS FET | |
| Fabricantes | Hitachi Semiconductor | |
| Logotipo |  |
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3SK295
Silicon N-Channel Dual Gate MOS FET
Application
UHF RF amplifier
Features
• Low noise figure.
NF = 2.0 dB typ. at f = 900 MHz
• Capable of low voltage operation
Outline
MPAK-4
2
3
1
4
1. Source
2. Gate1
3. Gate2
4. Drain
ADE-208-387
1st. Edition
1 page  
Forward Transfer Admittance vs.
Gate1 to Source Voltage
30
VDS = 6 V
f = 1 kHz
24
V G2S = 3.0 V
18 2.5 V
12 2.0 V
1.5 V
6 1.0 V
0.5 V
0 0.4 0.8 1.2 1.6 2.0
Gate1 to source voltage VG1S (V)
Noise Figure vs. Drain Current
5
VDS = 4 V
VG2S = 3 V
4 f = 900 MHz
3
2
1
0
12
5 10 20
Drain current I D (mA)
3SK295
Power Gain vs. Drain Current
25
20
15
10
5
0
12
VDS = 4 V
VG2S = 3 V
f = 900 MHz
5 10 20
Drain current I D (mA)
Power Gain vs. Drain to Source Voltage
25
20
15
10
5 VG2S = 3 V
I D = 10 mA
f = 900 MHz
0 2 4 6 8 10
Drain to source voltage VDS (V)
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet 3SK295.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
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