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PDF 3SK290 Data sheet ( Hoja de datos )
| Número de pieza | 3SK290 | |
| Descripción | Silicon N-Channel Dual Gate MOS FET | |
| Fabricantes | Hitachi Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 3SK290 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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3SK290
Silicon N-Channel Dual Gate MOS FET
Application
UHF RF amplifier
Features
· Low noise figure.
NF = 2.3 dB Typ. at f = 900 MHz
· High gain.
PG = 19.3 dB Typ. at f = 900 MHz
Outline
CMPAK–4
2
3
1
4
1. Source
2. Gate1
3. Gate2
4. Drain
ADE-208-271
1st. Edition
1 page  
Forward Transfer Admittance
vs. Gate 1 to Source Voltage
30
VDS = 6 V
f = 1 kHz
V G2S = 3.0 V
24 2.5 V
2.0 V
18
1.5 V
12
1.0 V
6
0
–0.5 0
0.5 1.0 1.5 2.0
Gate1 to Source Voltage VG1S (V)
3SK290
Power Gain vs. Drain Current
20
16
12
8
4 VDS = 4 V
VG2S = 3 V
f = 900 MHz
0 4 8 12 16 20
Drain Current I D (mA)
Noise Figure vs. Drain Current
5
VDS = 4 V
VG2S = 3 V
4 f = 900 MHz
3
2
1
0 4 8 12 16 20
Drain Current I D (mA)
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet 3SK290.PDF ] | |
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