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PDF 3SK253 Data sheet ( Hoja de datos )
| Número de pieza | 3SK253 | |
| Descripción | RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
3SK253
RF AMPLIFIER FOR UHF TUNER
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR
4 PINS MINI MOLD
FEATURES
• Low VDD Use
: (VDS = 3.5 V)
• Driving Battery
• Low Noise Figure : NF = 1.8 dB TYP. (f = 900 MHz)
• High Power Gain : GPS = 18.0 dB TYP. (f = 900 MHz)
• Suitable for use as RF amplifier in UHF TV tuner.
• Automatically Mounting : Embossed Type Taping
• Package
: 4 Pins Mini Mold
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage
Gate1 to Source Voltage
Gate2 to Source Voltage
VDSX
VG1S
VG2S
18
±8*1
±8*1
V
V
V
Gate1 to Drain Voltage
VG1D
18
V
Gate2 to Drain Voltage
VG2D
18
V
Drain Current
Total Power Dissipation
ID 25 mA
PD
200*2
mW
Channel Temperature
Tch 125 °C
Storage Temperature
Tstg –55 to +125 °C
*1: RL ≥ 10 kΩ
*2: Free air
PACKAGE DIMENSIONS
(Unit: mm)
2.8 +–00..23
1.5 +–00..21
5° 5°
5° 5°
PIN CONNECTIONS
1. Source
2. Drain
3. Gate2
4. Gate1
PRECAUTION:
Avoid high static voltages or electric fields so that this device would not suffer from any damage due to those voltage
fields.
Document No. P10583EJ2V0DS00 (2nd edition)
(Previous No. TD-2372)
Date Published August 1995 P
Printed in Japan
© 1993
1 page  
[MEMO]
3SK253
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 3SK253.PDF ] | |
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