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Calogic LLC - Diode Protected P-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch

Numéro de référence 3N173
Description Diode Protected P-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch
Fabricant Calogic LLC 
Logo Calogic  LLC 





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3N173 fiche technique
Diode Protected P-Channel
Enhancement Mode MOSFET
General Purpose Amplifier/Switch
3N172 / 3N173
CORPORATION
FEATURES
High Input Impedance
•• Diode Protected Gate
PIN CONFIGURATION
TO-72
1503Z
C,B
G
S
D
DEVICE SCHEMATIC
1
2
ABSOLUTE MAXIMUM RATINGS
(TA = 25oC unless otherwise specified)
Drain-Source or Drain-Gate Voltage
3N172. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
3N173. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Gate Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . 10µA
Gate Reverse Current . . . . . . . . . . . . . . . . . . . . . . . . . . . 1mA
Storage Temperature . . . . . . . . . . . . . . . . . . -65oC to +200oC
Operating Temperature . . . . . . . . . . . . . . . . . -55oC to +150oC
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375mW
Derate above 25oC . . . . . . . . . . . . . . . . . . . . . . . 3.0mW/oC
NOTE: Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ORDERING INFORMATION
Part
3N172-73
X3N172-73
Package
Hermetic TO-72
Sorted Chips in Carriers
Temperature Range
-55oC to +150oC
-55oC to +150oC
3
4 0200
ELECTRICAL CHARACTERISTICS (TA = 25oC and VBS = 0 unless otherwise specified)
SYMBOL
PARAMETER
IGSS
BVGSS
BVDSS
BVSDS
VGS(th)
VGS
IDSS
ISDS
rDS(on)
ID(on)
Gate Reverse Current
Gate Breakdown Voltage
Drain-Source Breakdown Voltage
Source-Drain Breakdown Voltage
Threshold Voltage
Gate Source Voltage
Zero Gate Voltage Drain Current
Zero Gate Voltage Source Current
Drain Source On Resistance
On Drain Current
3N172
MIN MAX
-200
-0.5
-40 -125
-40
-40
-2.0 -5.0
-2.0 -5.0
-3.0 -6.5
-0.4
-0.4
250
-5.0 -30
3N173
MIN MAX
-500
-1.0
-30 -125
-30
-30
-2.0 -5.0
-2.0 -5.0
-2.5 -6.5
-10
-10
350
-5.0 -30
UNITS
TEST CONDITIONS
pA
µA
V
nA
ohms
mA
VGS = -20V
TA = +125oC
ID = -10µA
ID = -10µA
IS = -10µA, VDB = 0
VDS = VGS, ID = -10µA
VDS = -15V, ID = -10µA
VDS = -15V, ID = -500µA
VDS = -15V, VGS = 0
VSD = -15V, VDB = 0, VGD = 0
VGS = -20V, ID = -100µA
VDS = -15V, VGS = -10V

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