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PDF 3N165-6 Data sheet ( Hoja de datos )
| Número de pieza | 3N165-6 | |
| Descripción | MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE MOSFET | |
| Fabricantes | Linear Integrated Systems | |
| Logotipo |  |
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Linear Integrated Systems
FEATURES
VERY HIGH INPUT IMPEDANCE
HIGH GATE BREAKDOWN
ULTRA LOW LEAKAGE
LOW CAPACITANCE
ABSOLUTE MAXIMUM RATINGS (NOTE 1)
(TA= 25°C unless otherwise noted)
Drain-Source or Drain-Gate Voltage (NOTE 2)
3N165
3N166
Transient G-S Voltage (NOTE 3)
Gate-Gate Voltage
Drain Current (NOTE 2)
Storage Temperature
Operating Temperature
Lead Temperature (Soldering, 10 sec.)
Power Dissipation (One Side)
Total Derating above 25°C
40 V
30 V
±125 V
±80 V
50 mA
-65°C to +200°C
-55°C to +150°C
+300°C
300 mW
4.2 mW/°C
3N165, 3N166
MONOLITHIC DUAL P-CHANNEL
ENHANCEMENT MODE MOSFET
17
35
84
Device Schematic
C
G1 G2
D1 D2
S
TO-99
Bottom View
ELECTRICAL CHARACTERISTICS (TA=25°C and VBS=0 unless otherwise specified)
LIMITS
SYMBOL
CHARACTERISTICS
MIN. MAX. UNITS
IGSSR
IGSSF
IDSS
ISDS
ID(on)
VGS(th)
VGS(th)
rDS(on)
gfs
gos
Ciss
Crss
Coss
RE(Yfs)
Gate Reverse Leakage Current
--
Gate Forward Leakage Current
--
--
Drain to Source Leakage Current
--
Source to Drain Leakage Current
--
On Drain Current
-5
Gate Source Threshold Voltage
-2
Gate Source Threshold Voltage
-2
Drain Source ON Resistance
--
Forward Transconductance
1500
Output Admittance
--
Input Capacitance
--
Reverse Transfer Capacitance
--
Output Capacitance
--
Common Source Forward Transconductance 1200
10
-10
-25
-200
-400
-30
-5
-5
300
3000
300
3.0
0.7
3.0
--
pA
mA
V
V
ohms
µs
µs
pF
µs
VGS= 40 V
VGS= -40 V
TA=+125°C
VDS= -20 V
VSD= -20 V
VDS= -15 V
VDS= -15 V
VDS= VGS
VGS= -20 V
VDS= -15V
VDS= -15V
(NOTE 4)
VDS= -15V
(NOTE 4)
CONDITIONS
VDB= 0
VGS= -10 V
ID= -10 µA
ID= -10 µA
ID= -100 µA
ID= -10mA
ID= -10mA
ID= -10mA
f=1kHz
f=1MHz
f=100MHz
Linear Integrated Systems 4042 Clipper Ct., Fremont, CA 94538 TEL: (510) 490-9160 • FAX: (510) 353-0261
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 3N165-6.PDF ] | |
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