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EIC discrete Semiconductors - SILICON ZENER DIODES

Numéro de référence 3EZ400D5
Description SILICON ZENER DIODES
Fabricant EIC discrete Semiconductors 
Logo EIC discrete Semiconductors 





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3EZ400D5 fiche technique
3EZ Series
SILICON ZENER DIODES
VZ : 3.9 - 400 Volts
PD : 3 Watts
FEATURES :
* Complete Voltage Range 3.9 to 400 Volts
* High peak reverse power dissipation
* High reliability
* Low leakage current
MECHANICAL DATA
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.339 gram
DO - 41
0.107 (2.7)
0.080 (2.0)
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
0.205 (5.2)
0.166 (4.2)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS
Rating at 25 °C ambient temperature unless otherw ise specified
Rating
Symbol
DC Power Dissipation at TL = 75 °C (Note1)
PD
Maximum Forward Voltage at IF = 200 mA
VF
Maximum Thermal Resistance Junction to Ambient Air (Note2) RθJA
Junction Temperature Range
TJ
Storage Temperature Range
Ts
Value
3.0
1.5
60
- 55 to + 175
- 55 to + 175
Unit
Watts
Volts
K/W
°C
°C
Note :
(1) TL = Lead temperature at 3/8 " (9.5mm) from body
(2) Valid provided that leads are kept at ambient temperature at a distance of 10 mm from case.
Fig. 1 Power Temperature Derating Curve
5
L = LEAD LENGTH
4
L = 1/8"
TO HEAT SINK
3 L = 3/8"
2
L = 1"
1
0
0 40 80 120 160 200
TL, LEAD TEMPERATURE (°C)
UPDATE : SEPTEMBER 9, 2000

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