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Datasheet 3EZ24-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
3EZ Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 3EZ | SILICON ZENER DIODES 3EZ Series
VZ : 3.9 - 400 Volts PD : 3 Watts
FEATURES :
* Complete Voltage Range 3.9 to 400 Volts * High peak reverse power dissipation * High reliability * Low leakage current
SILICON ZENER DIODES
DO - 41
0.107 (2.7) 0.080 (2.0)
1.00 (25.4) MIN.
MECHANICAL DATA
* Case : DO-41 Molded plastic * E  EIC discrete Semiconductors diode | | |
| 2 | 3EZ | Diode Zener Single 6.2V 5% 3W 2-Pin DO-41 T/R New Jersey Semiconductor diode | | |
| 3 | 3EZ1 | Silicon-Power-Z-Diodes (non-planar technology) 3EZ 1 … 3EZ 200 (3 W) Silicon-Power-Z-Diodes (non-planar technology) Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden)
Maximum power dissipation Maximale Verlustleistung Nominal Z-voltage – Nominale Z-Spannung Plastic case Kunststoffgehäuse Weight approx. – Gewicht ca. Plastic materi  Diotec Semiconductor diode | | |
| 4 | 3EZ10 | Silicon-Power-Z-Diodes (non-planar technology) 3EZ 1 … 3EZ 200 (3 W) Silicon-Power-Z-Diodes (non-planar technology) Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden)
Maximum power dissipation Maximale Verlustleistung Nominal Z-voltage – Nominale Z-Spannung Plastic case Kunststoffgehäuse Weight approx. – Gewicht ca. Plastic materi Diotec Semiconductor diode | | |
| 5 | 3EZ100 | GLASS PASSIVATED JUNCTION SILICON ZENER DIODES(VOLTAGE- 11 to 200 Volts Power - 3.0 Watts) DATA SHEET
3EZ11~3EZ200
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE- 11 to 200 Volts Power - 3.0 Watts
FEATURES
• Low profile package • Built-in strain relief • Glass passivated iunction • Low inductance • Typical ID less than 1.0µA above 11V • Plastic package has Underwriter  Pan Jit International Inc. diode | | |
| 6 | 3EZ100 | GLASS PASSIVATED JUNCTION SILICON ZENER DIODE 3EZ11 THRU 3EZ200
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE VOLTAGE - 11 TO 200 Volts Power - 3.0 Watts
FEATURES l l l l l l l l Low profile package Built-in strain relief Glass passivated junction Low inductance Excellent clamping capability Typical ID less than 1 A above 11V High temperature s  TRSYS diode | | |
| 7 | 3EZ100 | Silicon-Power-Z-Diodes (non-planar technology) 3EZ 1 … 3EZ 200 (3 W) Silicon-Power-Z-Diodes (non-planar technology) Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden)
Maximum power dissipation Maximale Verlustleistung Nominal Z-voltage – Nominale Z-Spannung Plastic case Kunststoffgehäuse Weight approx. – Gewicht ca. Plastic materi Diotec Semiconductor diode | |
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