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Número de pieza | 33984 | |
Descripción | Dual Intelligent High-Current Self-Protected Silicon High-Side Switch (4.0 m) | |
Fabricantes | Motorola Inc | |
Logotipo | ||
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No Preview Available ! MOTOROLA
Freescale Semiconductor, Inc.
SEMICONDUCTOR TECHNICAL DATA
Document order number: MC33984
Rev 4.0, 09/2004
Advance Information
Dual Intelligent High-Current
Self-Protected Silicon High-Side
Switch (4.0 mΩ)
The 33984 is a dual self-protected 4.0 mΩ silicon switch used to replace
electromechanical relays, fuses, and discrete devices in power management
applications. The 33984 is designed for harsh environments, and it includes
self-recovery features. The device is suitable for loads with high inrush current,
as well as motors and all types of resistive and inductive loads.
Programming, control, and diagnostics are implemented via the Serial
Peripheral Interface (SPI). A dedicated parallel input is available for alternate
and pulse-width modulation (PWM) control of each output. SPI-programmable
fault trip thresholds allow the device to be adjusted for optimal performance in
the application.
The 33984 is packaged in a power-enhanced 12 x 12 nonleaded PQFN
package with exposed tabs.
Features
• Dual 4.0 mΩ Max High-Side Switch with Parallel Input or SPI Control
• 6.0 V to 27 V Operating Voltage with Standby Currents < 5.0 µA
• Output Current Monitoring with Two SPI-Selectable Current Ratios
• SPI Control of Overcurrent Limit, Overcurrent Fault Blanking Time,
Output-OFF Open Load Detection, Output ON/OFF Control, Watchdog
Timeout, Slew Rates, and Fault Status Reporting
• SPI Status Reporting of Overcurrent, Open and Shorted Loads,
Overtemperature, Undervoltage and Overvoltage Shutdown, Fail-Safe
Pin Status, and Program Status
• Enhanced -16 V Reverse Polarity VPWR Protection
33984
DUAL HIGH-SIDE SWITCH
4.0 mΩ
Bottom View
SCCPANSAAELS1UE4F02F1-I0X:21
16-TERMINAL PQFN (12 x 12)
ORDERING INFORMATION
Device
Temperature
Range (TA)
Package
MC33984PNA/R2 -40°C to 125°C 16 PQFN
33S9im8p4lifSieidmAppplilficieatdionADpipaglircamation Diagram
VDD VDD
I/O
I/O
SO
SCLK
MCU
CS
SI
I/O
I/O
I/O
A/D
VDD VPWR
33984
VDD VPWR
FS GND
WAKE
SI HS1
SCLK
CS
SO
RST HS0
IN0
IN1
CSNS
FSI GND
LOAD
LOAD
GND PWR GND
This document contains certain information on a new product.
Specifications and information herein are subject to change without notice.
© Motorola, Inc. 2004
For More Information On This Product,
Go to: www.freescale.com
1 page Freescale Semiconductor, Inc.
MAXIMUM RATINGS
All voltages are with respect to ground unless otherwise noted.
Rating
Symbol
Value
Unit
ELECTRICAL RATINGS
Operating Voltage Range
Steady-State
VPWR
-16 to 41
V
VDD Supply Voltage
VDD
0 to 5.5
V
Input/Output Voltage (Note 1)
SO Output Voltage (Note 1)
WAKE Input Clamp Current
CSNS Input Clamp Current
Output Current (Note 2)
Output Clamp Energy (Note 3)
ESD Voltage
Human Body Model (Note 4)
Machine Model (Note 5)
VIN[0:1], RST, FSI
CSNS, SI, SCLK,
CS, FS
VSO
ICL(WAKE)
ICL(CSNS)
IHS[0:1]
ECL[0:1]
VESD1
VESD2
-0.3 to 7.0
-0.3 to VDD+0.3
2.5
10
30
0.75
± 2000
± 200
V
V
mA
mA
A
J
V
THERMAL RATINGS
Operating Temperature
Ambient
Junction
Storage Temperature
Thermal Resistance (Note 6)
Junction to Case
Junction to Ambient
Peak Terminal Reflow Temperature During Solder Mounting (Note 7)
TA
TJ
TSTG
RθJC
RθJA
TSOLDER
-40 to 125
-40 to 150
-55 to 150
<1.0
20
230
°C
°C
°C/W
°C
Notes
1. Exceeding voltage limits on RST, IN[0:1], or FSI terminals may cause a malfunction or permanent damage to the device.
2. Continuous high-side output current rating so long as maximum junction temperature is not exceeded. Calculation of maximum output current
using package thermal resistance is required.
3. Active clamp energy using single-pulse method (L = 16 mH, RL = 0, VPWR = 12 V, TJ = 150°C).
4. ESD1 testing is performed in accordance with the Human Body Model (CZAP = 100 pF, RZAP = 1500 Ω).
5. ESD2 testing is performed in accordance with the Machine Model (CZAP = 200 pF, RZAP = 0 Ω).
6. Device mounted on a 2s2p test board according to JEDEC JESD51-2.
7. Terminal soldering temperature limit is for 10 seconds maximum duration. Not designed for immersion soldering. Exceeding these limits may
cause malfunction or permanent damage to the device.
MOTOROLA ANALOG INTEGRATED CIRCUIT DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
33984
5
5 Page Freescale Semiconductor, Inc.
DYNAMIC ELECTRICAL CHARACTERISTICS (continued)
Characteristics noted under conditions 4.5 V ≤ VDD ≤ 5.5 V, 6.0 V ≤ VPWR ≤ 27 V, -40°C ≤ TJ ≤ 150°C unless otherwise noted. Typical
values noted reflect the approximate parameter mean at TA = 25°C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max Unit
POWER OUTPUT TIMING (continued)
Overcurrent Detection Blanking Time (OCLT[1:0])
00
01
10
11
t OCL0
t OCL1
t OCL2
t OCL3
108
7.0
0.8
0.08
155
10
1.2
0.15
ms
202
13
1.6
0.25
Overcurrent High Detection Blanking Time
CS to CSNS Valid Time (Note 22)
t OCH
1.0
10
20 µs
t CNSVAL
–
– 10 µs
HS0 Switching Delay Time (OSD[2:0])
000
001
010
011
100
101
110
111
HS1 Switching Delay Time (OSD[2:0])
000
001
010
011
100
101
110
111
Watchdog Timeout (WD[1:0]) (Note 23)
00
01
10
11
t OSD0
t OSD1
t OSD2
t OSD3
t OSD4
t OSD5
t OSD6
t OSD7
t OSD0
t OSD1
t OSD2
t OSD3
t OSD4
t OSD5
t OSD6
t OSD7
t WDTO0
t WDTO1
t WDTO2
t WDTO3
–
55
110
165
220
275
330
385
–
–
110
110
220
220
330
330
434
207
1750
875
0
75
150
225
300
375
450
525
0
0
150
150
300
300
450
450
620
310
2500
1250
–
95
190
285
380
475
570
665
–
–
190
190
380
380
570
570
806
403
3250
1625
ms
ms
ms
Notes
22. Time necessary for the CSNS to be within ±5% of the targeted value.
23. Watchdog timeout delay measured from the rising edge of WAKE to RST from a sleep state condition to output turn-ON with the output driven
OFF and FSI floating. The values shown are for WDR setting of [00]. The accuracy of tWDTO is consistent for all configured watchdog timeouts.
MOTOROLA ANALOG INTEGRATED CIRCUIT DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
33984
11
11 Page |
Páginas | Total 28 Páginas | |
PDF Descargar | [ Datasheet 33984.PDF ] |
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