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PDF 2SK445 Data sheet ( Hoja de datos )
| Número de pieza | 2SK445 | |
| Descripción | N-Channel Junction Silicon FET | |
| Fabricantes | Sanyo Semicon Device | |
| Logotipo |  |
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Ordering number:EN1439B
N-Channel Junction Silicon FET
2SK445
Video Camera 1st Stage Applications
Features
· Largeyfs.
· Small Ciss.
· Ultralow noise figure.
· High frequency, low-frequency, low noise amplifier.
Package Dimensions
unit:mm
2005C
[2SK445]
5.0
4.0
4.0
0.45
0.5
0.45
123
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Drain-to-Source Voltage
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
VDSS
VGDS
IG
ID
PD
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
1.3
Conditions
Parameter
Symbol
Conditions
Gate-to-Drain Breakdown Voltage
V(BR)GDS IG=–10µA, VDS=0V
Gate-to-Source Leakage Current
IGSS VGS=–10V, VDS=0V
Zero-Gate Voltage Drain Current
IDSS* VDS=5V, VGS=0V
Cutoff Voltage
VGS(off) VDS=5V, ID=100µA
Forward Transfer Admittance
| yfs | VDS=5V, VGS=0V, f=1kHz
Input Capacitance
Ciss VDS=5V, VGS=0V, f=1MHz
Reverse Transfer Capacitance
Crss VDS=5V, VGS=0V, f=1MHz
Noise Figure
NF VDS=5V, Rg=1kΩ, ID=1mA, f=1kHz
* : The 2SK445 is classified by VDS=5V as follows (unit : mA) :
5.0 F 12.0 10.0 G 24.0 16.0 H 38.0
1.3
0.44
1 : Drain
2 : Source
3 : Gate
JEDEC : TO-92
EIAJ : SC-43
SANYO : SPA
Ratings
15
–15
10
50
300
125
–55 to +125
Unit
V
V
mA
mA
mW
˚C
˚C
Ratings
min typ
–15
5.0*
–0.9
20 30
9.0
2.8
1.5
max
–1.0
38.0*
–2.0
Unit
V
nA
mA
V
mS
pF
pF
dB
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
42899TH (KT)/90895MO (KOTO)/6027KI/3095KI/N283KI, TS (KOTO) 8-5872 No.1439–1/3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SK445.PDF ] | |
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