|
|
PDF 2SK436 Data sheet ( Hoja de datos )
| Número de pieza | 2SK436 | |
| Descripción | N-Channel Junction Silicon FET | |
| Fabricantes | Sanyo Semicon Device | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de 2SK436 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
Ordering number:EN1405B
N-Channel Junction Silicon FET
2SK436
High-Frequency, Low-Frequency
General-Purpose Amplifier Applications
Applications
Package Dimensions
· AM tuner RF amplifiers and low-noise amplifiers.
unit:mm
Features
· Largeyfs.
· Ultralow noise figure.
· Small Crss.
· Ultrasmall-sized package permitting 2SK436-applied
sets to be made small and slim.
2050A
0.4
3
[2SK436]
0.16
0 to 0.1
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VDSS
VGDS
IG
ID
PD
Tj
Tstg
1 0.95 0.95 2
1.9
2.9
Conditions
1 : Source
2 : Drain
3 : Gate
SANYO : CP
Ratings
15
–15
10
20
150
125
–55 to +125
Unit
V
V
mA
mA
mW
˚C
˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Gate-to-Drain Breakdown Voltage
Gate-to-Source Leakage Current
Zero-Gate Voltage Drain Current
Cutoff Voltage
Forward Transfer Admittance
V(BR)GDS
IGSS
IDSS*
VGS(off)
| yfs |
Input Capacitance
Ciss
Reverse Transfer Capacitance
Crss
Noise Figure
NF
* : The 2SK436 is classified by IDSS as follows : (unit : mA)
Note) Marking : A
IDSS rank : 17, 18, 19, 20, 21, 22
IG=–10µA, VDS=0
VGS=–10V, VDS=0
VDS=5V, VGS=0
VDS=5V, ID=100µA
VDS=5V, VGS=0, f=1kHz
VDS=5V, VGS=0, f=1MHz
VDS=5V, VGS=0, f=1MHz
VDS=5V, ID=1mA, Rg=1kΩ, f=1kHz
1.2 17 2.1 1.7 18 3.0 2.5
3.5 20 6.0 5.0 21 8.5 7.3
19 4.2
22 12.0
Ratings
min typ
–15
1.2*
–0.5
8.0 17
7.0
2.0
1.5
max
–1.0
12.0*
–1.5
Unit
V
nA
mA
V
mS
pF
pF
dB
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
42099TH (KT)/90895MO (KOTO)/6017KI/N283KI, TS (KOTO) 8-5846 No.1405–1/6
1 page  
2SK436
No.1405–5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 2SK436.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 2SK430 | Silicon N-Channel MOS FET |  Hitachi |
| 2SK433 | Transistor |  ISAHAYA ELECTRONICS |
| 2SK435 | Silicon N-Channel Junction FET |  Hitachi Semiconductor |
| 2SK436 | N-Channel Junction Silicon FET | Sanyo Semicon Device |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |